Faculty Publications
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Item Investigations on electrical properties of the CdxZn 1-xS thin films prepared by spray pyrolysis technique(2011) Raviprakash, Y.; Bangera, K.V.; Shivakumar, G.K.Thin films of CdxZn(1-x)S (0≤x≤1) were deposited on glass substrates by the chemical spray pyrolysis technique. The electrical properties of these films in relation with composition were studied in detail. The entire investigation was made for a wide range of compositions of CdxZn(1-x)S thin films (x=0 to 1 in steps of 0.1). The variations of conductivity and current-voltage characteristics of these films were investigated as a function of the temperature and applied voltage. The activation energy of the films was found to vary from 0.35 eV to 0.78 eV. © 2011 American Institute of Physics.Item Electron beam deposited multilayer optical interference coatings using oxide composites(Minerals, Metals and Materials Society 184 Thorn Hill Road Warrendale PA 15086, 2012) Nayak, A.N.; Sahoo, N.K.; Tokas, R.B.; Biswas, A.; Kamble, N.M.Optical multilayer interference coatings are not only the key elements/components of the lasers, synchrotron (beam lines), and solar devices but also serve to propagate, deliver and manipulate electromagnetic radiations involved there for materials science experiments. Composite oxide thin film materials have added several promising dimensions with respect to the design, development of such precision devices related to such applications. Binary ZrO2MgO and ternary ZrO2-MgO-Al2O3 oxide composite thin films have been deposited using electron beam physical vapor deposition (EB-PVD) technique and nano-metric multilayer devices utilizing such films in a regular periodic layered design have been developed. As a specific objective, a multilayer high-reflection (HR) laser mirror having a designated bandwidth has been designed and developed for the Nd:YAG second harmonic laser wavelength of 532 run. These composite thin films and multilayers have been characterized using various microstructural probing techniques.Item Fabrication of solution combustion based transparent semiconducting titanium and zinc co-doped indium oxide (Itizo) films(Trans Tech Publications Ltd ttp@transtec.ch, 2019) Vardhan, R.V.; Manjunath, G.; Mandal, S.In this work, solution combustion processed titanium, zinc co-doped indium oxide high transparent semiconducting thin films were demonstrated at annealing temperatures of 300, 350 °C. In the process, low-temperature combustion at 123 °C was verified through thermogravimetric analysis; acetylacetone, 2-methoxyethanol served as fuel and solvent respectively in the redox reaction. Indium titanium zinc oxide (ITiZO) films were developed on glass substrates by spin coating followed by annealing at different temperatures. ITiZO films, powder exhibited high crystallinity exactly matching with indium oxide peaks without forming secondary phases. But, the presence of In, Ti, Zn, and O is clearly visible on film through energy dispersive spectroscopy. Films had transparency more than 85% in the visible range with optical band gap ranging 3.8-3.9 eV. These ITiZO films with smooth and low roughness ranging 0.46-0.5 nm, can have a potential application as an active layer in transparent thin film transistors and optoelectronic devices. © 2019 Trans Tech Publications Ltd, Switzerland.Item Semiconducting thin films of cadmium selenide have been grown by conventional thermal evaporation technique. The effect of various growth parameters like rate of deposition and deposition temperature has been studied in detail. Films deposited at room temperature are cadmium rich with segregated selenium globules. A deposition temperature of 453K has been found to yield stoichiometric, homogeneous films. The films have been analysed for optical band gap and thermal activation energies. Films of low electrical resistivity have been obtained for possible applications.(Growth and characterization of semiconducting cadmium selenide thin films) Shreekanthan, K.N.; Rajendra, B.V.; Kasturi, V.B.; Shivakumar, G.K.2003Item Semiconducting thin films of cadmium telluride, both p-type and n-type, have been prepared by conventional thermal evaporation technique. The influence of various growth parameters such as the rate of deposition, deposition temperature, post-deposition heat treatment, and source material composition has been investigated. The films deposited at high deposition rates and low substrate temperatures exhibited an excess of tellurium and showed a p-type conductivity, whereas those deposited at high substrate temperature and low deposition rates contained excess cadmium and are n-type in nature. An intrinsic bandgap of 1.49 eV for stoichiometric films obtained by both electrical and optical characterization is reported.(Growth and characterization of vacuum deposited cadmium telluride thin films) Shreekanthan, K.N.; Kasturi, V.B.; Shivakumar, G.K.2003Item Photoconductivity has been studied in cadmium selenide thin films prepared by thermal evaporation in vacuum. Attempts have been made to correlate the photoresponse with the deposition conditions. It has been observed that as-grown films, irrespective of the cadmium content, are not photosensitive and that baking in air, especially above 723 K, leads to considerable improvement in the photoconducting properties of cadmium selenide films.(Photoconductivity in vacuum deposited cadmium selenide thin films) Rajendra, B.V.; Kasturi, V.B.; Shivakumar, G.K.2004Item Structure and properties of vacuum deposited cadmium telluride thin films(2006) Shreekanthan, K.N.; Bangera, K.V.; Shivakumar, G.K.; Mahesha, M.G.Systematic and detailed study of the growth and properties of vacuum deposited cadmium telluride thin films was made. Both p- and n-type films were grown and these films were characterized for their structural, optical, and electrical properties. The crystallographic structure of the deposits was found to be dependent on the rate of deposition. Low deposition rates were observed to result in hexagonal deposits whereas high rates of deposition favoured cubic structure for the film. Electrical and optical properties were also found to be dependent on the deposition parameters.Item Formation of strain-induced martensite in austempered ductile iron(2008) Daber, S.; Prasad Rao, P.P.The present work has been taken up to study the influence of microstructure on the formation of martensite in austempered ductile iron. Ductile iron containing 1.5 wt.% nickel and 0.3 wt.% molybdenum was subjected to two types of austempering treatments. In the first, called as conventional austempering, the samples were austempered for 2 h at 300, 350 or 400 °C. In the second treatment, called as stepped austempering, the samples were initially austempered at 300 °C for 10, 20, 30, 45 or 60 min. These were subsequently austempered for 2 h at 400 °C. Tensile tests revealed considerable variation in the strain-hardening behaviour of the samples with different heat treatments. In the case of samples subjected to conventional austempering, it was found that strain-hardening exponent increased with increasing austempering temperature. In the case of samples subjected to stepped austempering, increased strain hardening was observed in samples subjected to short periods of first step austempering. Study of the microstructures revealed that increased strain hardening was associated with the formation of strain-induced martensite. There was a greater propensity for the formation of strain-induced martensite in the samples containing more of blocky austenite. Retained austenite in the form of fine films between sheaths of ferrite was relatively more stable. Studies revealed that the morphology, size and carbon content of the retained austenite were important parameters controlling their tendency to transform to martensite. © 2007 Springer Science+Business Media, LLC.Item Characterization of thin film Al/p-CdTe schottky diode(2008) Mahesha, M.G.; Kasturi, V.B.; Shivakumar, G.K.A study has been made on the behavior of Al/p-CdTe thin film junction grown by thermal evaporation method. I-V characteristics show that the Al makes Schottky contact with p-CdTe. The variation of junction capacitance with frequency and voltage has been studied to evaluate the barrier height. The activation energy and band gap have been estimated by studying variation of resistivity with temperature. Using all these data, band diagram of Al/p-CdTe has been proposed. © TÜB?TAK.Item The effect of substrate temperature on the structural, optical and electrical properties of vacuum deposited ZnTe thin films(2009) Rao, G.K.; Bangera, K.V.; Shivakumar, G.K.The present paper reports the effect of substrate temperature on the structural, optical and electrical properties of vacuum deposited zinc telluride (ZnTe) thin films. X-ray diffraction (XRD) analysis of the films, deposited on glass substrates, revealed that they have cubic structure with strong (111) texture. Room temperature deposits are tellurium rich and an increase in the substrate temperature up to 553 °K results in stoichiometric films. Electrical conductivity has been observed to increase with the increase in substrate temperature, accompanied by increase in the carrier concentration and the mobility of the carriers. The optical bandgap energy and the thermal activation energy of the films have also been evaluated. © 2009 Elsevier Ltd. All rights reserved.