Characterization of thin film Al/p-CdTe schottky diode
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Date
2008
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Abstract
A study has been made on the behavior of Al/p-CdTe thin film junction grown by thermal evaporation method. I-V characteristics show that the Al makes Schottky contact with p-CdTe. The variation of junction capacitance with frequency and voltage has been studied to evaluate the barrier height. The activation energy and band gap have been estimated by studying variation of resistivity with temperature. Using all these data, band diagram of Al/p-CdTe has been proposed. © TÜB?TAK.
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Keywords
Aluminum, Cadmium alloys, Cadmium compounds, Chemical activation, Schottky barrier diodes, Semiconducting cadmium telluride, Solids, Thermal evaporation, Thick films, Thin film devices, Thin films, band diagrams, Band gaps, Barrier height (BH), Current voltage (I V) characteristics, Junction capacitances, Schottky contacts, Schottky diodes, Activation energy
Citation
Turkish Journal of Physics, 2008, 32, 3, pp. 151-156