Semiconducting thin films of cadmium selenide have been grown by conventional thermal evaporation technique. The effect of various growth parameters like rate of deposition and deposition temperature has been studied in detail. Films deposited at room temperature are cadmium rich with segregated selenium globules. A deposition temperature of 453K has been found to yield stoichiometric, homogeneous films. The films have been analysed for optical band gap and thermal activation energies. Films of low electrical resistivity have been obtained for possible applications.
No Thumbnail Available
Date
Growth and characterization of semiconducting cadmium selenide thin films
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract
2003
Description
Keywords
Deposition, Evaporation, Film growth, Semiconducting cadmium compounds, Semiconducting films, Cadmium selenide thin films, Thin films
Citation
Crystal Research and Technology, 2003, 38, 1, pp. 30-33
