Semiconducting thin films of cadmium selenide have been grown by conventional thermal evaporation technique. The effect of various growth parameters like rate of deposition and deposition temperature has been studied in detail. Films deposited at room temperature are cadmium rich with segregated selenium globules. A deposition temperature of 453K has been found to yield stoichiometric, homogeneous films. The films have been analysed for optical band gap and thermal activation energies. Films of low electrical resistivity have been obtained for possible applications.

Simple item page
dc.contributor.authorShreekanthan, K.N.
dc.contributor.authorRajendra, B.V.
dc.contributor.authorKasturi, V.B.
dc.contributor.authorShivakumar, G.K.
dc.date.accessioned2026-02-05T11:00:30Z
dc.date.issuedGrowth and characterization of semiconducting cadmium selenide thin films
dc.description.abstract2003
dc.identifier.citationCrystal Research and Technology, 2003, 38, 1, pp. 30-33
dc.identifier.issn2321300
dc.identifier.urihttps://doi.org/10.1002/crat.200310003
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/27989
dc.subjectDeposition
dc.subjectEvaporation
dc.subjectFilm growth
dc.subjectSemiconducting cadmium compounds
dc.subjectSemiconducting films
dc.subjectCadmium selenide thin films
dc.subjectThin films
dc.titleSemiconducting thin films of cadmium selenide have been grown by conventional thermal evaporation technique. The effect of various growth parameters like rate of deposition and deposition temperature has been studied in detail. Films deposited at room temperature are cadmium rich with segregated selenium globules. A deposition temperature of 453K has been found to yield stoichiometric, homogeneous films. The films have been analysed for optical band gap and thermal activation energies. Films of low electrical resistivity have been obtained for possible applications.

Files

Collections

Journal Articles