Semiconducting thin films of cadmium telluride, both p-type and n-type, have been prepared by conventional thermal evaporation technique. The influence of various growth parameters such as the rate of deposition, deposition temperature, post-deposition heat treatment, and source material composition has been investigated. The films deposited at high deposition rates and low substrate temperatures exhibited an excess of tellurium and showed a p-type conductivity, whereas those deposited at high substrate temperature and low deposition rates contained excess cadmium and are n-type in nature. An intrinsic bandgap of 1.49 eV for stoichiometric films obtained by both electrical and optical characterization is reported.
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Date
Growth and characterization of vacuum deposited cadmium telluride thin films
Journal Title
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Volume Title
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Abstract
2003
Description
Keywords
Absorption edge, Post-deposition heat treatment, Thermal evaporation technique, Activation energy, Characterization, Composition, Crystallography, Grain boundaries, Growth (materials), Optoelectronic devices, Photodiodes, Polycrystalline materials, Semiconducting tellurium, Semiconductor lasers, Single crystals, Spectrophotometry, Stoichiometry, Thin films, Transmission electron microscopy, Cadmium alloys
Citation
Indian Journal of Engineering and Materials Sciences, 2003, 10, 5, pp. 433-436