Semiconducting thin films of cadmium telluride, both p-type and n-type, have been prepared by conventional thermal evaporation technique. The influence of various growth parameters such as the rate of deposition, deposition temperature, post-deposition heat treatment, and source material composition has been investigated. The films deposited at high deposition rates and low substrate temperatures exhibited an excess of tellurium and showed a p-type conductivity, whereas those deposited at high substrate temperature and low deposition rates contained excess cadmium and are n-type in nature. An intrinsic bandgap of 1.49 eV for stoichiometric films obtained by both electrical and optical characterization is reported.

Simple item page
dc.contributor.authorShreekanthan, K.N.
dc.contributor.authorKasturi, V.B.
dc.contributor.authorShivakumar, G.K.
dc.date.accessioned2026-02-05T11:00:22Z
dc.date.issuedGrowth and characterization of vacuum deposited cadmium telluride thin films
dc.description.abstract2003
dc.identifier.citationIndian Journal of Engineering and Materials Sciences, 2003, 10, 5, pp. 433-436
dc.identifier.issn9714588
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/27972
dc.subjectAbsorption edge
dc.subjectPost-deposition heat treatment
dc.subjectThermal evaporation technique
dc.subjectActivation energy
dc.subjectCharacterization
dc.subjectComposition
dc.subjectCrystallography
dc.subjectGrain boundaries
dc.subjectGrowth (materials)
dc.subjectOptoelectronic devices
dc.subjectPhotodiodes
dc.subjectPolycrystalline materials
dc.subjectSemiconducting tellurium
dc.subjectSemiconductor lasers
dc.subjectSingle crystals
dc.subjectSpectrophotometry
dc.subjectStoichiometry
dc.subjectThin films
dc.subjectTransmission electron microscopy
dc.subjectCadmium alloys
dc.titleSemiconducting thin films of cadmium telluride, both p-type and n-type, have been prepared by conventional thermal evaporation technique. The influence of various growth parameters such as the rate of deposition, deposition temperature, post-deposition heat treatment, and source material composition has been investigated. The films deposited at high deposition rates and low substrate temperatures exhibited an excess of tellurium and showed a p-type conductivity, whereas those deposited at high substrate temperature and low deposition rates contained excess cadmium and are n-type in nature. An intrinsic bandgap of 1.49 eV for stoichiometric films obtained by both electrical and optical characterization is reported.

Files

Collections

Journal Articles