Faculty Publications
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Item Improved tri-gate FinFET transistor with InGaAs(Institute of Electrical and Electronics Engineers Inc., 2017) Sharma, B.S.; Bhat, M.S.Inclusion of the III-V semiconductors in Field Effect Transistor technology is frequent, now days. In this paper, a tri-gate FinFET using InGaAs is proposed. Current carrying capability of the FinFET is usually large, since tri-gate structure, hence an appropriate doping in the channel would improve the ON and OFF characteristics of the device. To get an excellent ION/Ioff, doping concentration in the channel and source/drain region is varied according to material requirements. Channel length Lg of the proposed device is 20 nm. With high-K dielectric H fO2 as oxide, metal gate-oxide stack in the FinFET is designed and simulations are performed. Simulation of FinFET with gate-oxide thickness tox = 1 nm and a channel width Wc = 10nm, exhibits Ion/Ioff = 10.801 × 103, subthreshold slope SS ≈ 62 mV/decade and drain-induced-barrier-lowering DIBL = 83.3 mV/V. © 2017 IEEE.Item Design of Dual-Material Gate Junctionless FinFET based on the Properties of Materials Forming Gate Electrode(Taylor and Francis Ltd., 2024) Mathew, S.; Bhat, K.N.; Nithin; Rao, R.This work elaborately investigates the electrical behaviour and short channel performance of Dual-Material Gate Junctionless Fin Field Effect Transistors (DMG-JLFinFETs) with multiple-gate metal pairs and varying gate metal length ratios. Rigorous analysis on the nature of DMG-JLFinFET with gate length as low as 10 nm is done using a device simulator by Silvaco, Inc. The gate material closer to the source, namely M1, has a dominating influence on the threshold voltage (Vth) and tunnelling current (Itunn) than the gate material closer to the drain (named M2) in a DMG-JLFinFET. Itunn is lower when the work function of M1 (ΦM1) is greater than the work function of M2 (ΦM2). The relative change in threshold voltage is minimum for Platinum–Gold (PtAu)-DMG-JLFinFET (0.68%). Titanium–Aluminium (TiAl) and Nickel–Titanium (NiTi) gate material pairs, having the same work function difference of 0.38 eV, have the least Drain-Induced Barrier Lowering (DIBL) of 12.88 mV/V. A better Sub-threshold Swing (SS) is observed for DMG-JLFinFET having ΦM1 < ΦM2. For devices with ΦM1 > ΦM2, SS can be improved by making a length of M1 (LM1) greater than 70% of the total gate length (Lg). © 2024 IETE.Item Performance Enhancement of Dual Material Gate Junctionless FinFETs using Dielectric Spacer(Taylor and Francis Ltd., 2024) Mathew, S.; Bhat, K.N.; Nithin; Rao, R.In this work, a detailed investigation is done on the effectiveness of various spacer materials having different spacer lengths (LSP), in improving the performance of Dual-Material Gate-Junctionless FinFET (DMG-JLFinFET). Various performance metrics, such as Drain Induced Barrier Lowering (DIBL), Sub-threshold Swing (SS), ON current (ION), OFF current (IOFF), ratio of ION to IOFF (ION/IOFF), and tunneling current (Itunn), are closely monitored at gate lengths (Lg) down to 10 nm. DIBL degradation of 3.46 mV/V and SS degradation of 4.97 mV/dec are observed when Lg scales down from 30 nm to 10 nm. Except for the case of Itunn, other performance metrics improve with an increase in dielectric constant and length of spacer materials. The optimum performance of DMG-JLFinFET with a channel length of 10 nm is obtained when LSP is 5 nm. Enhancement in analog performance metrics is observed when high κ materials are used as spacers. Transconductance Generation Factor (TGF) improves from 35.86 V−1 to 47.4 V−1 and intrinsic gain increases from 6.93 dB to 11.98 dB when high κ dielectric materials like TiO2 are incorporated as spacers in a DMG-JLFinFET. © 2024 IETE.Item An improved Fourier series-based analytical model for threshold voltage and sub-threshold swing in SOI junctionless FinFET(Elsevier Ltd, 2024) Mathew, S.; Chennamadhavuni, S.; Rao, R.In this work, Fourier series-based analytical models for threshold voltage (Vth) and Sub-threshold Swing (SS) are developed for Junctionless Fin Field Effect Transistor (JLFinFET) on Silicon On Insulator (SOI) substrate, taking into account the location of the onset of current conduction in the channel. Rigorous simulations were conducted to analyse the current conduction path when JLFinFET surpasses the threshold voltage. Based on the findings from these simulations, threshold voltage condition used for deriving the threshold voltage model is modified. This modified model gives a better prediction of Vth for JLFinFET than the already existing model which doesn't include approximations based on the location of onset of current conduction. The analytical model developed for SS is also capable of closely predicting the SS of JLFinFET obtained from the TCAD simulator down to a gate length of 20 nm. © 2024 Elsevier LtdItem Investigation of Performance Improvement in Drain Extended Longitudinal FinFETs for Thermal-aware Sustainable Electronics Applications(Springer Science and Business Media B.V., 2025) Nanjunda, A.; Nikhil, K.S.This work presents a comprehensive investigation of GaN-based Junctionless Drain Extended Longitudinal FinFET (DELFinFET) using Sentaurus TCAD simulations, targeting thermally robust and energy efficient semiconductor devices as a means to reduce the environmental footprint of electronic devices. Introducing a longitudinal fin achieves superior lateral electric field modulation, improved carrier transport, and enhanced electric control. This helps in improving the key analog performance metrics such as sub-threshold slope, leakage current (Ioff), transconductance (gm), and the switching ratio (Ion/Ioff). The results obtained highlight the potential of DELFinFET for low-power applications. A comparative evaluation is performed between the designed device and other device configurations to verify the effectiveness of the design. © The Author(s), under exclusive licence to Springer Nature B.V. 2025.Item Fourier Series-Based Analytical Model for Channel Potential of Dual Material Gate SOI Junctionless FinFET(Springer, 2025) Mathew, S.; Rao, R.In this article, a robust Fourier series based analytical model for channel potential is derived for a Dual Material Gate Junctionless Fin Field Effect Transistor (DMG JLFinFET) on a Silicon-On-Insulator (SOI) substrate. For most of the regions in the cuboidal channel, especially at the location where the onset of current conduction happens, the channel potential model developed in this work matches very well with the potential obtained from TCAD simulations. The analytical model presented in this article is capable of calculating the channel potential of the DMG JLFinFETs for most of the channel region, considering various device parameters such as channel length, fin height, and fin width, with a maximum deviation of 0.07 V. However, for channel regions very close to buried oxide, the channel potential model over-predicts potential obtained through simulation by around 0.1 V. In most of the cases of varying device parameters, the Fourier series-based potential model developed in this work accurately predicts channel potential at the location of the onset of current conduction. Hence, it can be used to model various device parameters such as threshold voltage and sub-threshold swing. © The Minerals, Metals & Materials Society 2025.Item Investigation of the impact of gate oxide thickness variation of Junction-less FinFET using BSIM-CMG model for LIF neuron and STDP circuit application(Institute of Physics, 2025) Vinaya, S.J.; Rao, R.; Nikhil, K.S.In neuromorphic circuits, Leaky Integrate-and-Fire (LIF) neuron and Spike-Timing-Dependent Plasticity (STDP) circuits are very much essential. These circuits are significantly influenced by the characteristics of the transistors used in their design. In this work, the impact of gate oxide thickness variation on the performance of FinFET-based neuromorphic circuits using the (Berkeley Short-channel IGFET Model—Common Multi-Gate) BSIM-CMG model is investigated. TCAD simulations are carried out to analyze the electrical characteristics of FinFETs with varying oxide thicknesses. The circuit-level simulations are carried out using Cadence tool to evaluate their impact on synaptic weight updates in STDP and LIF neuron operation and circuits. The results show that reducing the gate oxide thickness from 5 nm to 2 nm enhances the capacitor voltage response, thereby improving charge storage and synaptic weight modulation. It has been shown that there is a consistent increase in capacitor voltage as oxide thickness decreases, which directly impacts the learning efficiency of STDP circuits. Varying oxide thickness will also impact on firing frequency of LIF neuron circuit.These results signifies performances of STDP and LIF neuron circuits for neuromorphic applications. © 2025 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.Item Temperature dependence of linearity parameters of GaN-based junctionless drain extended FinFET(Elsevier Ltd, 2025) Ashwini, N.; Nikhil, K.S.In this work, temperature dependent linearity parameters of Galliun Nitride (GaN, a wide gap material) based Junctionless Drain Extended FinFETs (JLDEFinFETs) for a temperature ranging from 100K to 450K are investigated using 3D thermodynamic TCAD simulation. An analysis of the transfer characteristics, off-current, transconductance, and its derivatives are carried out at various temperatures. Additionally, the impact of various linearity parameters, such as VIP2, VIP3, IIP3, IMD3, and the 1-dB compression point on temperature is studied in detail. The device under consideration has a metal gate contact which offers opportunities to tune its performance parameters like on-current, off-current and threshold voltage. A comparative analysis of the designed device with various devices is also carried out to validate the device design. © 2025 Elsevier Ltd