Temperature dependence of linearity parameters of GaN-based junctionless drain extended FinFET
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Date
2025
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Publisher
Elsevier Ltd
Abstract
In this work, temperature dependent linearity parameters of Galliun Nitride (GaN, a wide gap material) based Junctionless Drain Extended FinFETs (JLDEFinFETs) for a temperature ranging from 100K to 450K are investigated using 3D thermodynamic TCAD simulation. An analysis of the transfer characteristics, off-current, transconductance, and its derivatives are carried out at various temperatures. Additionally, the impact of various linearity parameters, such as VIP<inf>2</inf>, VIP<inf>3</inf>, IIP<inf>3</inf>, IMD<inf>3</inf>, and the 1-dB compression point on temperature is studied in detail. The device under consideration has a metal gate contact which offers opportunities to tune its performance parameters like on-current, off-current and threshold voltage. A comparative analysis of the designed device with various devices is also carried out to validate the device design. © 2025 Elsevier Ltd
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Keywords
Electronic design automation, FinFET, Temperature distribution, Threshold voltage, Wide band gap semiconductors, FinFETs, Junctionless drain extended FinFET, Linearity, Material-based, Off current, Off-current, TCAD, Temperature dependence, Temperature dependent, Wide-gap materials, Gallium nitride, III-V semiconductors
Citation
Microelectronics Journal, 2025, 165, , pp. -