Temperature dependence of linearity parameters of GaN-based junctionless drain extended FinFET

Simple item page
dc.contributor.authorAshwini, N.
dc.contributor.authorNikhil, K.S.
dc.date.accessioned2026-02-03T13:19:18Z
dc.date.issued2025
dc.description.abstractIn this work, temperature dependent linearity parameters of Galliun Nitride (GaN, a wide gap material) based Junctionless Drain Extended FinFETs (JLDEFinFETs) for a temperature ranging from 100K to 450K are investigated using 3D thermodynamic TCAD simulation. An analysis of the transfer characteristics, off-current, transconductance, and its derivatives are carried out at various temperatures. Additionally, the impact of various linearity parameters, such as VIP<inf>2</inf>, VIP<inf>3</inf>, IIP<inf>3</inf>, IMD<inf>3</inf>, and the 1-dB compression point on temperature is studied in detail. The device under consideration has a metal gate contact which offers opportunities to tune its performance parameters like on-current, off-current and threshold voltage. A comparative analysis of the designed device with various devices is also carried out to validate the device design. © 2025 Elsevier Ltd
dc.identifier.citationMicroelectronics Journal, 2025, 165, , pp. -
dc.identifier.issn9598324
dc.identifier.urihttps://doi.org/10.1016/j.mejo.2025.106813
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/20012
dc.publisherElsevier Ltd
dc.subjectElectronic design automation
dc.subjectFinFET
dc.subjectTemperature distribution
dc.subjectThreshold voltage
dc.subjectWide band gap semiconductors
dc.subjectFinFETs
dc.subjectJunctionless drain extended FinFET
dc.subjectLinearity
dc.subjectMaterial-based
dc.subjectOff current
dc.subjectOff-current
dc.subjectTCAD
dc.subjectTemperature dependence
dc.subjectTemperature dependent
dc.subjectWide-gap materials
dc.subjectGallium nitride
dc.subjectIII-V semiconductors
dc.titleTemperature dependence of linearity parameters of GaN-based junctionless drain extended FinFET

Files

Collections

Journal Articles