Faculty Publications
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Item Studies on vacuum deposited p-ZnTe/n-ZnSe heterojunction diodes(2010) Rao, K.G.; Bangera, K.V.; Shivakumar, G.K.p-ZnTe/n-ZnSe heterojunction diodes were prepared by vacuum deposition and a detailed electrical characterization of the heterojunction was performed. The I-V and C-V characteristics of the heterojunction diodes were studied to determine the conduction mechanism, barrier height, space charge density and thickness of the depletion region in the heterojunction. The bandgap and activation energies of n-ZnSe and p-ZnTe were also determined and a theoretical band diagram of p-ZnTe/n-ZnSe heterojunction was drawn based on Anderson's model. © 2010 Elsevier Ltd. All rights reserved.Item Studies on vacuum deposited p-ZnTe/n-CdTe heterojunction diodes(2011) Rao, K.G.; Bangera, K.V.; Shivakumar, G.K.The present paper reports the fabrication and detailed electrical characterization of p-ZnTe/n-CdTe heterojunction diodes prepared by vacuum deposition method. The possible conduction mechanisms of the heterojunction diode were determined by analyzing the I-V characteristics. The C-V characteristics of the heterojunction diodes were studied to determine the barrier height, carrier concentration and thickness of the depletion region in the heterojunction. A theoretical band diagram of the heterojunction was drawn based on Anderson's model. © 2010 Elsevier Ltd. All rights reserved.Item Fabrication and characterization of thermal evaporated n-Si/ p-ZnTe thin film heterojunction diodes(2013) Rao, K.; Bangera, K.V.; Shivakumar, G.K.The paper reports the fabrication and detailed electrical characterization of thermal evaporated n-Si/p-ZnTe thin film heterojunction diodes. The heterojunction diodes were prepared by depositing ZnTe films on n-Si substrates. The conduction mechanism, barrier height, space charge density and width of the depletion region were determined by I-V and C-V characteristics of the heterojunction diodes. The bandgap and activation energies of n-Si and p-ZnTe were also determined and a theoretical band diagram of n-Si/p-ZnTe heterojunction was drawn based on Anderson's model. © 2012 Elsevier B.V. All rights reserved.Item Electrical characterization of vacuum-deposited p-CdTe/n-ZnSe heterojunctions(Springer Nature, 2015) Acharya, S.; Bangera, K.V.; Shivakumar, G.K.In this paper, we report a heterojunction of p-CdTe/n-ZnSe fabricated on a quartz substrate using thermal evaporation technique. The materials have a larger band gap difference in comparison to other II–VI heterojunctions-involving CdTe. The larger band gap difference is expected to increase diffusion potential and photovoltaic conversion efficiency. The electrical conduction mechanism involved, barrier height and band offset at the interface that are crucial to determine device performance are evaluated using electrical characterization of heterojunction. The junction exhibited excellent rectification behavior with an estimated barrier height of 0.9 eV. © 2015, The Author(s).Item Conduction Mechanism in n-CdSe/p-ZnTe Heterojunction(Springer New York LLC barbara.b.bertram@gsk.com, 2016) Acharya, S.; Bangera, K.V.; Shivakumar, G.K.This work reports on fabrication using vacuum evaporation and characterization of n-CdSe/p-ZnTe heterojunctions. Before forming the junction, CdSe and ZnTe layers were characterized for crystal structure and chemical composition to account for observed electrical properties. The heterojunction was characterized by current–voltage (I–V) measurements, temperature dependence of reverse saturation current, admittance, and capacitance–voltage (C–V) measurements. I–V characteristics of the heterojunction exhibited clear diode nature with rectification ratio of 9.05 at ±0.5 V and ideality factor n = 3.34. From the temperature dependence of the I–V characteristic, a barrier height ?b of 0.36 eV was determined for the CdSe–ZnTe junction. Conduction mechanism analysis revealed contributions from both thermionic and space-charge-limited conduction. Furthermore, the shunt leakage current was found to be space-charge limited, showing symmetry in current near V = 0 V. The dependence of capacitance on frequency and bias voltage has been analyzed to identify the bulk and interface defects. These measurements indicate the presence of bulk defects and high series resistance, severely affecting current transport. © 2016, The Minerals, Metals & Materials Society.Item Photoresponse of atomically thin MoS2 layers and their planar heterojunctions(Royal Society of Chemistry, 2016) Kallatt, S.; Umesh, G.; Bhat, N.; Majumdar, K.MoS2 monolayers exhibit excellent light absorption and large thermoelectric power, which are, however, accompanied by a very strong exciton binding energy-resulting in complex photoresponse characteristics. We study the electrical response to scanning photo-excitation on MoS2 monolayer (1L) and bilayer (2L) devices, and also on monolayer/bilayer (1L/2L) planar heterojunction and monolayer/few-layer/multi-layer (1L/FL/ML) planar double heterojunction devices to unveil the intrinsic mechanisms responsible for photocurrent generation in these materials and junctions. A strong photoresponse modulation is obtained by scanning the position of the laser spot, as a consequence of controlling the relative dominance of a number of layer dependent properties, including (i) the photoelectric effect (PE), (ii) the photothermoelectric effect (PTE), (iii) the excitonic effect, (iv) hot photo-electron injection from metal, and (v) carrier recombination. The monolayer and bilayer devices show a peak photoresponse when the laser is focused at the source junction, while the peak position shifts to the monolayer/few-layer junction in the heterostructure devices. The photoresponse is found to be dependent on the incoming light polarization when the source junction is illuminated, although the polarization sensitivity drastically reduces at the monolayer/few-layer heterojunction. Finally, we investigate the laser position dependent transient response of the photocurrent to reveal that trapping of carriers in SiO2 at the source junction is a critical factor to determine the transient response in 2D photodetectors, and also show that, by a systematic device design, such trapping can be avoided in the heterojunction devices, resulting in a fast transient response. The insights obtained will play an important role in designing a fast 2D TMD based photodetector and related optoelectronic and thermoelectric devices. © 2016 The Royal Society of Chemistry.Item Effect of CuPc and PEDOT:PSS as hole transport layers in planar heterojunction CdS/CdTe solar cell(Institute of Physics Publishing helen.craven@iop.org, 2019) Varadharajaperumal, S.; Ilango, M.S.; Hegde, G.; Satyanarayan, M.N.This paper presents the fabrication and photovoltaic performance of new architecture based planar heterojunction CdS/CdTe thin film solar cells which were employed with two hole transport layers (PEDOT:PSS as HTL1 and CuPc as HTL2). The reported solar cells were fabricated through various deposition techniques such as sputtering, thermal evaporation, spin coating and characterized by FESEM, AFM, XPS, UPS and AM 1.5 solar simulator. The interfacial layer growth and chemical state identification of the deposited thin films were studied by cross-sectional FESEM and XPS techniques. The band bending occurs between absorbing and transporting layer helps to inject the excited charge carriers effectively into electrode that was explained using UPS analysis. The present work intends to explain the role of additional window layer (TiO2), buffer layer (CdS) and hole transporting layers (PEDOT:PSS and CuPc) in the novel device architecture. Further, these findings will offer new research directions to address the double hole transport (back contact) layers selection concept in CdS/CdTe heterojunction based solar cells. © 2019 IOP Publishing Ltd.Item Controlled growth of 1D-ZnO nanotubes using one-step hot plate technique for CZTS heterojunction solar cells(Elsevier Ltd, 2020) Varadharajaperumal, S.; Alagarasan, D.; Ganesan, R.; Satyanarayan, M.N.; Hegde, G.Present work reports a simple, rapid, one-step hot plate technique for systematic growth transformation of highly oriented ZnO nanorods (ZNRs) into ZnO nanotubes (ZNTs). The controlled growth of ZnO nanostructures (nanorods and nanotubes) was achieved at low temperature (90 °C) in a short time (1hr) in a sealed weighing bottle (100 ml). It is observed that as the Zinc precursor concentration increases, a vertically grown ZnR morphology evolves into ZNT. The crystal structure of as-grown ZnO nanostructures, surface morphology, phase, and optical energy gap were respectively characterized by XRD, FESEM, Raman, XPS, CL and UV–Vis spectroscopy. Grown nanostructures are further explored for their application in CZTS based heterojunction photovoltaics. © 2019Item Enhanced photocatalytic efficiency of layered CdS/CdSe heterostructures: Insights from first principles electronic structure calculations(Institute of Physics Publishing helen.craven@iop.org, 2020) Shenoy, S.; Tarafder, K.Metal sulfides are emerging as an important class of materials for photocatalytic applications, because of their high photo responsive nature in the wide visible light range. In this class of materials, CdS with a direct band gap of 2.4 eV, has gained special attention due to the relative position of its conduction band minimum, which is very close to the energies of the reduced protons. However, the photogenerated holes in the valence band of CdS are prone to oxidation and destroy its structure during photocatalysis. Thus constructing a CdS based heterostructure would be an effective strategy for improving the photocatalytic performance. In this work we have done a detail theoretical investigation based on hybrid density functional theory calculation to get insight into the energy band structure, mobility and charge transfer across the CdS/CdSe heterojunction. The results indicate that CdS/CdSe forms type-II heterostructure that has several advantages in improving the photocatalytic efficiency under visible light irradiation. © 2020 IOP Publishing Ltd.Item Graphitic C3N4/CdS composite photocatalyst: Synthesis, characterization and photodegradation of methylene blue under visible light(Elsevier B.V., 2020) Shenoy, S.; Tarafder, K.; Sridharan, K.Design and development of heterojunction photocatalysts is one among the main strategies for improving the photocatalytic activity of semiconductor materials. Here, we report the synthesis of a heterojunction photocatalyst by the embedment of cadmium sulphide (CdS) nanoparticles on the surface of graphitic carbon nitride (g-C3N4) layers through hydrothermal approach. The g-C3N4/CdS heterojunction photocatalyst exhibited two-fold and three-fold enhancement in the photodegradation efficiency in comparison to pristine CdS and g-C3N4, respectively in the removal of 20 ppm methylene blue dye molecules under visible light irradiation. The enhanced photocatalytic activity can be attributed to the formation of heterojunction and the synergistic effect of g-C3N4 and CdS in the promotion of charge separation and charge mobility that was tracked through photoluminescence spectroscopy. © 2020 Elsevier B.V.