Fabrication and characterization of thermal evaporated n-Si/ p-ZnTe thin film heterojunction diodes
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2013
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Abstract
The paper reports the fabrication and detailed electrical characterization of thermal evaporated n-Si/p-ZnTe thin film heterojunction diodes. The heterojunction diodes were prepared by depositing ZnTe films on n-Si substrates. The conduction mechanism, barrier height, space charge density and width of the depletion region were determined by I-V and C-V characteristics of the heterojunction diodes. The bandgap and activation energies of n-Si and p-ZnTe were also determined and a theoretical band diagram of n-Si/p-ZnTe heterojunction was drawn based on Anderson's model. © 2012 Elsevier B.V. All rights reserved.
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Andersons, Band diagrams, Barrier heights, C-V characterization, Conduction Mechanism, Depletion region, Electrical characterization, Heterojunction diodes, I-V and C-V characteristics, IV characterization, Activation energy, Characterization, Heterojunctions, Semiconductor diodes, Silicon, Thermal evaporation, Thin films, Zinc compounds
Citation
Current Applied Physics, 2013, 13, 1, pp. 298-301