Fabrication and characterization of thermal evaporated n-Si/ p-ZnTe thin film heterojunction diodes

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dc.contributor.authorRao, K.
dc.contributor.authorBangera, K.V.
dc.contributor.authorShivakumar, G.K.
dc.date.accessioned2026-02-05T09:35:05Z
dc.date.issued2013
dc.description.abstractThe paper reports the fabrication and detailed electrical characterization of thermal evaporated n-Si/p-ZnTe thin film heterojunction diodes. The heterojunction diodes were prepared by depositing ZnTe films on n-Si substrates. The conduction mechanism, barrier height, space charge density and width of the depletion region were determined by I-V and C-V characteristics of the heterojunction diodes. The bandgap and activation energies of n-Si and p-ZnTe were also determined and a theoretical band diagram of n-Si/p-ZnTe heterojunction was drawn based on Anderson's model. © 2012 Elsevier B.V. All rights reserved.
dc.identifier.citationCurrent Applied Physics, 2013, 13, 1, pp. 298-301
dc.identifier.issn15671739
dc.identifier.urihttps://doi.org/10.1016/j.cap.2012.08.001
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/26888
dc.subjectAndersons
dc.subjectBand diagrams
dc.subjectBarrier heights
dc.subjectC-V characterization
dc.subjectConduction Mechanism
dc.subjectDepletion region
dc.subjectElectrical characterization
dc.subjectHeterojunction diodes
dc.subjectI-V and C-V characteristics
dc.subjectIV characterization
dc.subjectActivation energy
dc.subjectCharacterization
dc.subjectHeterojunctions
dc.subjectSemiconductor diodes
dc.subjectSilicon
dc.subjectThermal evaporation
dc.subjectThin films
dc.subjectZinc compounds
dc.titleFabrication and characterization of thermal evaporated n-Si/ p-ZnTe thin film heterojunction diodes

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