Electrical characterization of vacuum-deposited p-CdTe/n-ZnSe heterojunctions
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Date
2015
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Publisher
Springer Nature
Abstract
In this paper, we report a heterojunction of p-CdTe/n-ZnSe fabricated on a quartz substrate using thermal evaporation technique. The materials have a larger band gap difference in comparison to other II–VI heterojunctions-involving CdTe. The larger band gap difference is expected to increase diffusion potential and photovoltaic conversion efficiency. The electrical conduction mechanism involved, barrier height and band offset at the interface that are crucial to determine device performance are evaluated using electrical characterization of heterojunction. The junction exhibited excellent rectification behavior with an estimated barrier height of 0.9 eV. © 2015, The Author(s).
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Keywords
Cadmium telluride, Electric properties, Energy gap, II-VI semiconductors, Interfaces (materials), Thermal evaporation, Thin films, Band gap difference, Device performance, Diffusion potential, Electrical characterization, Electrical conduction mechanisms, Photovoltaic conversion, Rectification behavior, Thermal evaporation technique, Heterojunctions
Citation
Applied Nanoscience (Switzerland), 2015, 5, 8, pp. 1003-1007