Electrical characterization of vacuum-deposited p-CdTe/n-ZnSe heterojunctions

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dc.contributor.authorAcharya, S.
dc.contributor.authorBangera, K.V.
dc.contributor.authorShivakumar, G.K.
dc.date.accessioned2026-02-05T09:33:37Z
dc.date.issued2015
dc.description.abstractIn this paper, we report a heterojunction of p-CdTe/n-ZnSe fabricated on a quartz substrate using thermal evaporation technique. The materials have a larger band gap difference in comparison to other II–VI heterojunctions-involving CdTe. The larger band gap difference is expected to increase diffusion potential and photovoltaic conversion efficiency. The electrical conduction mechanism involved, barrier height and band offset at the interface that are crucial to determine device performance are evaluated using electrical characterization of heterojunction. The junction exhibited excellent rectification behavior with an estimated barrier height of 0.9 eV. © 2015, The Author(s).
dc.identifier.citationApplied Nanoscience (Switzerland), 2015, 5, 8, pp. 1003-1007
dc.identifier.issn21905509
dc.identifier.urihttps://doi.org/10.1007/s13204-015-0406-x
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/26191
dc.publisherSpringer Nature
dc.subjectCadmium telluride
dc.subjectElectric properties
dc.subjectEnergy gap
dc.subjectII-VI semiconductors
dc.subjectInterfaces (materials)
dc.subjectThermal evaporation
dc.subjectThin films
dc.subjectBand gap difference
dc.subjectDevice performance
dc.subjectDiffusion potential
dc.subjectElectrical characterization
dc.subjectElectrical conduction mechanisms
dc.subjectPhotovoltaic conversion
dc.subjectRectification behavior
dc.subjectThermal evaporation technique
dc.subjectHeterojunctions
dc.titleElectrical characterization of vacuum-deposited p-CdTe/n-ZnSe heterojunctions

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