Studies on vacuum deposited p-ZnTe/n-CdTe heterojunction diodes
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2011
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Abstract
The present paper reports the fabrication and detailed electrical characterization of p-ZnTe/n-CdTe heterojunction diodes prepared by vacuum deposition method. The possible conduction mechanisms of the heterojunction diode were determined by analyzing the I-V characteristics. The C-V characteristics of the heterojunction diodes were studied to determine the barrier height, carrier concentration and thickness of the depletion region in the heterojunction. A theoretical band diagram of the heterojunction was drawn based on Anderson's model. © 2010 Elsevier Ltd. All rights reserved.
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Keywords
Andersons, Band diagrams, Barrier heights, C-V characteristic, C-V characterization, CdTe, Conduction Mechanism, Depletion region, Electrical characterization, Heterojunction diodes, IV characteristics, IV characterization, Vacuum deposition method, Cadmium alloys, Cadmium compounds, Carrier concentration, Semiconductor diodes, Vacuum, Vacuum deposition, Heterojunctions
Citation
Solid-State Electronics, 2011, 56, 1, pp. 100-103