Studies on vacuum deposited p-ZnTe/n-CdTe heterojunction diodes

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dc.contributor.authorRao, K.G.
dc.contributor.authorBangera, K.V.
dc.contributor.authorShivakumar, G.K.
dc.date.accessioned2026-02-05T09:36:00Z
dc.date.issued2011
dc.description.abstractThe present paper reports the fabrication and detailed electrical characterization of p-ZnTe/n-CdTe heterojunction diodes prepared by vacuum deposition method. The possible conduction mechanisms of the heterojunction diode were determined by analyzing the I-V characteristics. The C-V characteristics of the heterojunction diodes were studied to determine the barrier height, carrier concentration and thickness of the depletion region in the heterojunction. A theoretical band diagram of the heterojunction was drawn based on Anderson's model. © 2010 Elsevier Ltd. All rights reserved.
dc.identifier.citationSolid-State Electronics, 2011, 56, 1, pp. 100-103
dc.identifier.issn381101
dc.identifier.urihttps://doi.org/10.1016/j.sse.2010.12.004
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/27302
dc.subjectAndersons
dc.subjectBand diagrams
dc.subjectBarrier heights
dc.subjectC-V characteristic
dc.subjectC-V characterization
dc.subjectCdTe
dc.subjectConduction Mechanism
dc.subjectDepletion region
dc.subjectElectrical characterization
dc.subjectHeterojunction diodes
dc.subjectIV characteristics
dc.subjectIV characterization
dc.subjectVacuum deposition method
dc.subjectCadmium alloys
dc.subjectCadmium compounds
dc.subjectCarrier concentration
dc.subjectSemiconductor diodes
dc.subjectVacuum
dc.subjectVacuum deposition
dc.subjectHeterojunctions
dc.titleStudies on vacuum deposited p-ZnTe/n-CdTe heterojunction diodes

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