Browsing by Author "Kasturi, V.B."

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Characterization of thin film Al/p-CdTe schottky diode
(2008) Mahesha, M.G.; Kasturi, V.B.; Shivakumar, G.K.
A study has been made on the behavior of Al/p-CdTe thin film junction grown by thermal evaporation method. I-V characteristics show that the Al makes Schottky contact with p-CdTe. The variation of junction capacitance with frequency and voltage has been studied to evaluate the barrier height. The activation energy and band gap have been estimated by studying variation of resistivity with temperature. Using all these data, band diagram of Al/p-CdTe has been proposed. T B?TAK.
Characterization of thin film Al/p-CdTe schottky diode
(2008) Mahesha, M.G.; Kasturi, V.B.; Shivakumar, G.K.
A study has been made on the behavior of Al/p-CdTe thin film junction grown by thermal evaporation method. I-V characteristics show that the Al makes Schottky contact with p-CdTe. The variation of junction capacitance with frequency and voltage has been studied to evaluate the barrier height. The activation energy and band gap have been estimated by studying variation of resistivity with temperature. Using all these data, band diagram of Al/p-CdTe has been proposed. © TÜB?TAK.
Growth and characterization of semiconducting cadmium selenide thin films
(2003) Shreekanthan, K.N.; Rajendra, B.V.; Kasturi, V.B.; Shivakumar, G.K.
Semiconducting thin films of cadmium selenide have been grown by conventional thermal evaporation technique. The effect of various growth parameters like rate of deposition and deposition temperature has been studied in detail. Films deposited at room temperature are cadmium rich with segregated selenium globules. A deposition temperature of 453K has been found to yield stoichiometric, homogeneous films. The films have been analysed for optical band gap and thermal activation energies. Films of low electrical resistivity have been obtained for possible applications.
Growth and characterization of vacuum deposited cadmium telluride thin films
(2003) Shreekanthan, K.N.; Kasturi, V.B.; Shivakumar, G.K.
Semiconducting thin films of cadmium telluride, both p-type and n-type, have been prepared by conventional thermal evaporation technique. The influence of various growth parameters such as the rate of deposition, deposition temperature, post-deposition heat treatment, and source material composition has been investigated. The films deposited at high deposition rates and low substrate temperatures exhibited an excess of tellurium and showed a p-type conductivity, whereas those deposited at high substrate temperature and low deposition rates contained excess cadmium and are n-type in nature. An intrinsic bandgap of 1.49 eV for stoichiometric films obtained by both electrical and optical characterization is reported.
The p-type doping of vacuum deposited ZnTe thin films with bismuth by a new technique of using nano-spheres
(2010) Rao, G.K.; Shivakumar, G.K.; Kasturi, V.B.
The present paper reports the successful doping of vacuum evaporated zinc telluride (ZnTe) thin films with bismuth by a new technique of using nano-spheres. The discontinuous films of bismuth (the dopant material), containing bismuth in the form of nano-spheres, were prepared by vacuum evaporation and the ZnTe films were then deposited on top of them. The scanning electron microscopy (SEM) and X-ray diffraction (XRD) techniques were used to ascertain the formation of discontinuous bismuth films and the proper diffusion of bismuth in ZnTe films, respectively. After doping, the carrier concentration of the ZnTe films was found to increase by an order of the magnitude. The electrical conductivity also improved significantly. The photoconductivity and photo-response properties of the doped films were also analysed. 2010 Elsevier B.V. All rights reserved.
Photoconductivity has been studied in cadmium selenide thin films prepared by thermal evaporation in vacuum. Attempts have been made to correlate the photoresponse with the deposition conditions. It has been observed that as-grown films, irrespective of the cadmium content, are not photosensitive and that baking in air, especially above 723 K, leads to considerable improvement in the photoconducting properties of cadmium selenide films.
(Photoconductivity in vacuum deposited cadmium selenide thin films) Rajendra, B.V.; Kasturi, V.B.; Shivakumar, G.K.
2004
Photoconductivity in vacuum deposited cadmium selenide thin films
(2004) Rajendra, B.V.; Kasturi, V.B.; Shivakumar, G.K.
Photoconductivity has been studied in cadmium selenide thin films prepared by thermal evaporation in vacuum. Attempts have been made to correlate the photoresponse with the deposition conditions. It has been observed that as-grown films, irrespective of the cadmium content, are not photosensitive and that baking in air, especially above 723 K, leads to considerable improvement in the photoconducting properties of cadmium selenide films.
Semiconducting thin films of cadmium selenide have been grown by conventional thermal evaporation technique. The effect of various growth parameters like rate of deposition and deposition temperature has been studied in detail. Films deposited at room temperature are cadmium rich with segregated selenium globules. A deposition temperature of 453K has been found to yield stoichiometric, homogeneous films. The films have been analysed for optical band gap and thermal activation energies. Films of low electrical resistivity have been obtained for possible applications.
(Growth and characterization of semiconducting cadmium selenide thin films) Shreekanthan, K.N.; Rajendra, B.V.; Kasturi, V.B.; Shivakumar, G.K.
2003
Semiconducting thin films of cadmium telluride, both p-type and n-type, have been prepared by conventional thermal evaporation technique. The influence of various growth parameters such as the rate of deposition, deposition temperature, post-deposition heat treatment, and source material composition has been investigated. The films deposited at high deposition rates and low substrate temperatures exhibited an excess of tellurium and showed a p-type conductivity, whereas those deposited at high substrate temperature and low deposition rates contained excess cadmium and are n-type in nature. An intrinsic bandgap of 1.49 eV for stoichiometric films obtained by both electrical and optical characterization is reported.
(Growth and characterization of vacuum deposited cadmium telluride thin films) Shreekanthan, K.N.; Kasturi, V.B.; Shivakumar, G.K.
2003
The p-type doping of vacuum deposited ZnTe thin films with bismuth by a new technique of using nano-spheres
(Elsevier Ltd, 2010) Rao, K.G.; Shivakumar, G.K.; Kasturi, V.B.
The present paper reports the successful doping of vacuum evaporated zinc telluride (ZnTe) thin films with bismuth by a new technique of using nano-spheres. The discontinuous films of bismuth (the dopant material), containing bismuth in the form of nano-spheres, were prepared by vacuum evaporation and the ZnTe films were then deposited on top of them. The scanning electron microscopy (SEM) and X-ray diffraction (XRD) techniques were used to ascertain the formation of discontinuous bismuth films and the proper diffusion of bismuth in ZnTe films, respectively. After doping, the carrier concentration of the ZnTe films was found to increase by an order of the magnitude. The electrical conductivity also improved significantly. The photoconductivity and photo-response properties of the doped films were also analysed. © 2010 Elsevier B.V. All rights reserved.