Please use this identifier to cite or link to this item:
Title: Conduction mechanisms in vacuum deposited p-ZnTe/n-Si heterojunction diodes
Authors: Rao, K.G.
Bangera, K.V.
Shivakumar, G.K.
Issue Date: 2011
Citation: AIP Conference Proceedings, 2011, Vol.1349, PART A, pp.601-602
Abstract: p-ZnTe/n-Si heterojunction diodes were prepared by vacuum depositing ZnTe films on n-Si substrates. Detailed electrical characterization was performed to determine the conduction mechanisms operating in the diode. Important parameters such as ideality factor and barrier height were also determined. � 2011 American Institute of Physics.
Appears in Collections:2. Conference Papers

Files in This Item:
There are no files associated with this item.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.