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|dc.identifier.citation||AIP Conference Proceedings, 2011, Vol.1349, PART A, pp.601-602||en_US|
|dc.description.abstract||p-ZnTe/n-Si heterojunction diodes were prepared by vacuum depositing ZnTe films on n-Si substrates. Detailed electrical characterization was performed to determine the conduction mechanisms operating in the diode. Important parameters such as ideality factor and barrier height were also determined. � 2011 American Institute of Physics.||en_US|
|dc.title||Conduction mechanisms in vacuum deposited p-ZnTe/n-Si heterojunction diodes||en_US|
|Appears in Collections:||2. Conference Papers|
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