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dc.contributor.authorRao, K.G.
dc.contributor.authorBangera, K.V.
dc.contributor.authorShivakumar, G.K.
dc.identifier.citationAIP Conference Proceedings, 2011, Vol.1349, PART A, pp.601-602en_US
dc.description.abstractp-ZnTe/n-Si heterojunction diodes were prepared by vacuum depositing ZnTe films on n-Si substrates. Detailed electrical characterization was performed to determine the conduction mechanisms operating in the diode. Important parameters such as ideality factor and barrier height were also determined. � 2011 American Institute of Physics.en_US
dc.titleConduction mechanisms in vacuum deposited p-ZnTe/n-Si heterojunction diodesen_US
dc.typeBook chapteren_US
Appears in Collections:2. Conference Papers

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