![](/jspui/image/dspace_header.jpg)
Please use this identifier to cite or link to this item:
https://idr.nitk.ac.in/jspui/handle/123456789/11481
Title: | Enhanced thermoelectric power of Al and Sb doped In 2 Te 3 thin films |
Authors: | Vallem, S. Bangera, K.V. G.K, S. |
Issue Date: | 2019 |
Citation: | Materials Science in Semiconductor Processing, 2019, Vol.93, , pp.366-370 |
Abstract: | Aluminium and antimony are used as dopants for In 2 Te 3 to study their influence on the thermoelectric power of the films. Both aluminium and antimony are expected to replace indium in the film and contribute to the structural, electrical and thermoelectric behaviour of indium telluride. It is observed that addition of both Al and Sb dopants induced an additional phase of free Te. The electrical conductivity of In 2 Te 3 films is observed to reduce with Al doping and increase with Sb doping when compared with the electrical conductivity of un-doped films. The thermoelectric power is found to be maximum for 2.1% Al doped and 1% Sb doped films. Moreover, the thermoelectric power factor of In 2 Te 3 films is found to be enhanced 3.1 times for 2.1% doping of Al and 8.7 times for 1% Sb doping. 2019 Elsevier Ltd |
URI: | http://idr.nitk.ac.in/jspui/handle/123456789/11481 |
Appears in Collections: | 1. Journal Articles |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.