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https://idr.nitk.ac.in/jspui/handle/123456789/11481Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Vallem, S. | |
| dc.contributor.author | Bangera, K.V. | |
| dc.contributor.author | G.K, S. | |
| dc.date.accessioned | 2020-03-31T08:31:30Z | - |
| dc.date.available | 2020-03-31T08:31:30Z | - |
| dc.date.issued | 2019 | |
| dc.identifier.citation | Materials Science in Semiconductor Processing, 2019, Vol.93, , pp.366-370 | en_US |
| dc.identifier.uri | http://idr.nitk.ac.in/jspui/handle/123456789/11481 | - |
| dc.description.abstract | Aluminium and antimony are used as dopants for In 2 Te 3 to study their influence on the thermoelectric power of the films. Both aluminium and antimony are expected to replace indium in the film and contribute to the structural, electrical and thermoelectric behaviour of indium telluride. It is observed that addition of both Al and Sb dopants induced an additional phase of free Te. The electrical conductivity of In 2 Te 3 films is observed to reduce with Al doping and increase with Sb doping when compared with the electrical conductivity of un-doped films. The thermoelectric power is found to be maximum for 2.1% Al doped and 1% Sb doped films. Moreover, the thermoelectric power factor of In 2 Te 3 films is found to be enhanced 3.1 times for 2.1% doping of Al and 8.7 times for 1% Sb doping. 2019 Elsevier Ltd | en_US |
| dc.title | Enhanced thermoelectric power of Al and Sb doped In 2 Te 3 thin films | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | 1. Journal Articles | |
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