Investigation of hole transport in ?-NPD using impedance spectroscopy with F4TCNQ as hole-injection layer
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Date
2015
Journal Title
Journal ISSN
Volume Title
Publisher
Academic Press
Abstract
The charge carrier transport is studied in N,N?-di(1-naphthyl)-N,N?-diphenyl-(1,1?-biphenyl)-4,4?-diamine (?-NPD) with the incorporation of sequentially doped p-type dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F<inf>4</inf>TCNQ) as hole-injection layer in hole-only device structures. The field dependent mobility of the charge carriers is determined using frequency dependent capacitance, conductance and impedance methods by varying the thickness of ?-NPD. The Poole-Frenkel zero-field mobility and the Poole-Frenkel coefficient thus obtained for each device in all the three methods is found to be almost constant. © 2015 Elsevier Ltd. All rights reserved.
Description
Keywords
Capacitance, Carrier mobility, Carrier transport, Charge carriers, Charge transfer, Doping (additives), Electric conductance, Electric impedance, Electron injection, Product development, Field-dependent mobility, Frequency-dependent capacitance, Hole injection layers, Hole transports, Hole-only device, Impedance method, Impedance spectroscopy, Poole-Frenkel, Charge injection
Citation
Superlattices and Microstructures, 2015, 83, , pp. 766-775