Investigation of hole transport in ?-NPD using impedance spectroscopy with F4TCNQ as hole-injection layer

Simple item page
dc.contributor.authorFernandes, J.M.
dc.contributor.authorRaveendra Kiran, M.R.
dc.contributor.authorUlla, H.
dc.contributor.authorSatyanarayan, M.N.
dc.contributor.authorUmesh, G.
dc.date.accessioned2026-02-05T09:33:41Z
dc.date.issued2015
dc.description.abstractThe charge carrier transport is studied in N,N?-di(1-naphthyl)-N,N?-diphenyl-(1,1?-biphenyl)-4,4?-diamine (?-NPD) with the incorporation of sequentially doped p-type dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F<inf>4</inf>TCNQ) as hole-injection layer in hole-only device structures. The field dependent mobility of the charge carriers is determined using frequency dependent capacitance, conductance and impedance methods by varying the thickness of ?-NPD. The Poole-Frenkel zero-field mobility and the Poole-Frenkel coefficient thus obtained for each device in all the three methods is found to be almost constant. © 2015 Elsevier Ltd. All rights reserved.
dc.identifier.citationSuperlattices and Microstructures, 2015, 83, , pp. 766-775
dc.identifier.issn7496036
dc.identifier.urihttps://doi.org/10.1016/j.spmi.2015.04.019
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/26260
dc.publisherAcademic Press
dc.subjectCapacitance
dc.subjectCarrier mobility
dc.subjectCarrier transport
dc.subjectCharge carriers
dc.subjectCharge transfer
dc.subjectDoping (additives)
dc.subjectElectric conductance
dc.subjectElectric impedance
dc.subjectElectron injection
dc.subjectProduct development
dc.subjectField-dependent mobility
dc.subjectFrequency-dependent capacitance
dc.subjectHole injection layers
dc.subjectHole transports
dc.subjectHole-only device
dc.subjectImpedance method
dc.subjectImpedance spectroscopy
dc.subjectPoole-Frenkel
dc.subjectCharge injection
dc.titleInvestigation of hole transport in ?-NPD using impedance spectroscopy with F4TCNQ as hole-injection layer

Files

Collections

Journal Articles