Structural, electrical and optical properties of stoichiometric In2Te3 thin films
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Date
2017
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Publisher
Elsevier Ltd
Abstract
In<inf>2</inf>Te<inf>3</inf> thin films were grown by thermal evaporation technique. The annealing of films played a major role to obtain stoichiometry, regardless of substrate temperature. Annealing at 300 ?C resulted in well oriented, mono-phased and nearly stoichiometric In<inf>2</inf>Te<inf>3</inf> thin films. The variation in grain size of In<inf>2</inf>Te<inf>3</inf> films associated with the substrate temperatures provides a significant control over the resistivity of the films, and the resistivity decreased with an increase in the grain size. The activation energy and optical band gap of stoichiometric In<inf>2</inf>Te<inf>3</inf> films were found to be 0.01±0.005 eV and 0.99±0.02 eV, respectively. The absorption co-efficient of these films was found to be of the order of 105 cm?1. © 2016 Elsevier Ltd and Techna Group S.r.l.
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Keywords
Activation energy, Annealing, Energy gap, Evaporation, Grain size and shape, Optical properties, Thermal evaporation, Absorption co-efficient, Electrical and optical properties, Grain size, Substrate temperature, Thermal evaporation technique, Thin films
Citation
Ceramics International, 2017, 43, 4, pp. 3748-3751