Structural, electrical and optical properties of stoichiometric In2Te3 thin films

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dc.contributor.authorVallem, V.
dc.contributor.authorBangera, K.V.
dc.contributor.authorShivakumar, G.K.
dc.date.accessioned2026-02-05T09:32:26Z
dc.date.issued2017
dc.description.abstractIn<inf>2</inf>Te<inf>3</inf> thin films were grown by thermal evaporation technique. The annealing of films played a major role to obtain stoichiometry, regardless of substrate temperature. Annealing at 300 ?C resulted in well oriented, mono-phased and nearly stoichiometric In<inf>2</inf>Te<inf>3</inf> thin films. The variation in grain size of In<inf>2</inf>Te<inf>3</inf> films associated with the substrate temperatures provides a significant control over the resistivity of the films, and the resistivity decreased with an increase in the grain size. The activation energy and optical band gap of stoichiometric In<inf>2</inf>Te<inf>3</inf> films were found to be 0.01±0.005 eV and 0.99±0.02 eV, respectively. The absorption co-efficient of these films was found to be of the order of 105 cm?1. © 2016 Elsevier Ltd and Techna Group S.r.l.
dc.identifier.citationCeramics International, 2017, 43, 4, pp. 3748-3751
dc.identifier.issn2728842
dc.identifier.urihttps://doi.org/10.1016/j.ceramint.2016.12.008
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/25675
dc.publisherElsevier Ltd
dc.subjectActivation energy
dc.subjectAnnealing
dc.subjectEnergy gap
dc.subjectEvaporation
dc.subjectGrain size and shape
dc.subjectOptical properties
dc.subjectThermal evaporation
dc.subjectAbsorption co-efficient
dc.subjectElectrical and optical properties
dc.subjectGrain size
dc.subjectSubstrate temperature
dc.subjectThermal evaporation technique
dc.subjectThin films
dc.titleStructural, electrical and optical properties of stoichiometric In2Te3 thin films

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