Enhanced thermoelectric power of Al and Sb doped In 2 Te 3 thin films
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Date
2019
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Publisher
Elsevier Ltd
Abstract
Aluminium and antimony are used as dopants for In <inf>2</inf> Te <inf>3</inf> to study their influence on the thermoelectric power of the films. Both aluminium and antimony are expected to replace indium in the film and contribute to the structural, electrical and thermoelectric behaviour of indium telluride. It is observed that addition of both Al and Sb dopants induced an additional phase of free Te. The electrical conductivity of In <inf>2</inf> Te <inf>3</inf> films is observed to reduce with Al doping and increase with Sb doping when compared with the electrical conductivity of un-doped films. The thermoelectric power is found to be maximum for 2.1% Al doped and 1% Sb doped films. Moreover, the thermoelectric power factor of In <inf>2</inf> Te <inf>3</inf> films is found to be enhanced 3.1 times for 2.1% doping of Al and 8.7 times for 1% Sb doping. © 2019 Elsevier Ltd
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Keywords
Aluminum, Doping (additives), Electric conductivity, Electric properties, Indium compounds, Semiconductor doping, Structural properties, Tellurium compounds, Thermoelectric power, Thin films, Al doped, Al-doping, Doped films, Electrical conductivity, Indium telluride, Sb doping, Sb-doped, Thermoelectric power factors, Antimony
Citation
Materials Science in Semiconductor Processing, 2019, 93, , pp. 366-370