Enhanced thermoelectric power of Al and Sb doped In 2 Te 3 thin films

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dc.contributor.authorVallem, V.
dc.contributor.authorBangera, K.V.
dc.contributor.authorG.k, S.
dc.date.accessioned2026-02-05T09:30:14Z
dc.date.issued2019
dc.description.abstractAluminium and antimony are used as dopants for In <inf>2</inf> Te <inf>3</inf> to study their influence on the thermoelectric power of the films. Both aluminium and antimony are expected to replace indium in the film and contribute to the structural, electrical and thermoelectric behaviour of indium telluride. It is observed that addition of both Al and Sb dopants induced an additional phase of free Te. The electrical conductivity of In <inf>2</inf> Te <inf>3</inf> films is observed to reduce with Al doping and increase with Sb doping when compared with the electrical conductivity of un-doped films. The thermoelectric power is found to be maximum for 2.1% Al doped and 1% Sb doped films. Moreover, the thermoelectric power factor of In <inf>2</inf> Te <inf>3</inf> films is found to be enhanced 3.1 times for 2.1% doping of Al and 8.7 times for 1% Sb doping. © 2019 Elsevier Ltd
dc.identifier.citationMaterials Science in Semiconductor Processing, 2019, 93, , pp. 366-370
dc.identifier.issn13698001
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2019.01.025
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/24631
dc.publisherElsevier Ltd
dc.subjectAluminum
dc.subjectDoping (additives)
dc.subjectElectric conductivity
dc.subjectElectric properties
dc.subjectIndium compounds
dc.subjectSemiconductor doping
dc.subjectStructural properties
dc.subjectTellurium compounds
dc.subjectThermoelectric power
dc.subjectThin films
dc.subjectAl doped
dc.subjectAl-doping
dc.subjectDoped films
dc.subjectElectrical conductivity
dc.subjectIndium telluride
dc.subjectSb doping
dc.subjectSb-doped
dc.subjectThermoelectric power factors
dc.subjectAntimony
dc.titleEnhanced thermoelectric power of Al and Sb doped In 2 Te 3 thin films

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