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Author: search.filters.author.Nikhil, K.S.Subject: search.filters.subject.Gallium nitride

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    Investigation of Performance Improvement in Drain Extended Longitudinal FinFETs for Thermal-aware Sustainable Electronics Applications
    (Springer Science and Business Media B.V., 2025) Nanjunda, A.; Nikhil, K.S.
    This work presents a comprehensive investigation of GaN-based Junctionless Drain Extended Longitudinal FinFET (DELFinFET) using Sentaurus TCAD simulations, targeting thermally robust and energy efficient semiconductor devices as a means to reduce the environmental footprint of electronic devices. Introducing a longitudinal fin achieves superior lateral electric field modulation, improved carrier transport, and enhanced electric control. This helps in improving the key analog performance metrics such as sub-threshold slope, leakage current (Ioff), transconductance (gm), and the switching ratio (Ion/Ioff). The results obtained highlight the potential of DELFinFET for low-power applications. A comparative evaluation is performed between the designed device and other device configurations to verify the effectiveness of the design. © The Author(s), under exclusive licence to Springer Nature B.V. 2025.
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    Temperature dependence of linearity parameters of GaN-based junctionless drain extended FinFET
    (Elsevier Ltd, 2025) Ashwini, N.; Nikhil, K.S.
    In this work, temperature dependent linearity parameters of Galliun Nitride (GaN, a wide gap material) based Junctionless Drain Extended FinFETs (JLDEFinFETs) for a temperature ranging from 100K to 450K are investigated using 3D thermodynamic TCAD simulation. An analysis of the transfer characteristics, off-current, transconductance, and its derivatives are carried out at various temperatures. Additionally, the impact of various linearity parameters, such as VIP2, VIP3, IIP3, IMD3, and the 1-dB compression point on temperature is studied in detail. The device under consideration has a metal gate contact which offers opportunities to tune its performance parameters like on-current, off-current and threshold voltage. A comparative analysis of the designed device with various devices is also carried out to validate the device design. © 2025 Elsevier Ltd