Faculty Publications

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Author: search.filters.author.Mahesha, M.G.Subject: search.filters.subject.Thermal evaporation

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    Characterization of thin film Al/p-CdTe schottky diode
    (2008) Mahesha, M.G.; Kasturi, V.B.; Shivakumar, G.K.
    A study has been made on the behavior of Al/p-CdTe thin film junction grown by thermal evaporation method. I-V characteristics show that the Al makes Schottky contact with p-CdTe. The variation of junction capacitance with frequency and voltage has been studied to evaluate the barrier height. The activation energy and band gap have been estimated by studying variation of resistivity with temperature. Using all these data, band diagram of Al/p-CdTe has been proposed. © TÜB?TAK.
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    Characterization of p-CdTe/n-CdS hetero-junctions
    (2009) Mahesha, M.G.; Bangera, K.V.; Shivakumar, G.K.
    Nano-crystalline CdTe/CdS thin film hetero-junctions have been grown on glass substrate by thermal evaporation technique. The growth conditions to get stoichiometric compound films have been optimized. The grown hetero-junctions have been characterized for their I-V characteristics. Analysis of I-V characteristics has been made to investigate the current conduction mechanism in p-CdTe/n-CdS hetero-junction. The band gap energy of cadmium telluride and cadmium sulfide films have been computed from the study of variation of resistance with temperature. Based on the study, band diagram for p-CdTe/n-CdS hetero-junction has been proposed.