Characterization of p-CdTe/n-CdS hetero-junctions
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Date
2009
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Abstract
Nano-crystalline CdTe/CdS thin film hetero-junctions have been grown on glass substrate by thermal evaporation technique. The growth conditions to get stoichiometric compound films have been optimized. The grown hetero-junctions have been characterized for their I-V characteristics. Analysis of I-V characteristics has been made to investigate the current conduction mechanism in p-CdTe/n-CdS hetero-junction. The band gap energy of cadmium telluride and cadmium sulfide films have been computed from the study of variation of resistance with temperature. Based on the study, band diagram for p-CdTe/n-CdS hetero-junction has been proposed.
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Keywords
Band diagrams, Band gap energy, CdS, CdTe, CdTe/CdS thin films, Current conduction mechanisms, Glass substrates, Growth conditions, IV characteristics, Nanocrystallines, Stoichiometric compound, Thermal evaporation technique, Cadmium, Cadmium alloys, Cadmium sulfide, Cadmium telluride, Data storage equipment, Thermal evaporation, Cadmium compounds
Citation
Materials Science in Semiconductor Processing, 2009, 12, 3, pp. 89-93