Characterization of p-CdTe/n-CdS hetero-junctions

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dc.contributor.authorMahesha, M.G.
dc.contributor.authorBangera, K.V.
dc.contributor.authorShivakumar, G.K.
dc.date.accessioned2026-02-05T09:36:41Z
dc.date.issued2009
dc.description.abstractNano-crystalline CdTe/CdS thin film hetero-junctions have been grown on glass substrate by thermal evaporation technique. The growth conditions to get stoichiometric compound films have been optimized. The grown hetero-junctions have been characterized for their I-V characteristics. Analysis of I-V characteristics has been made to investigate the current conduction mechanism in p-CdTe/n-CdS hetero-junction. The band gap energy of cadmium telluride and cadmium sulfide films have been computed from the study of variation of resistance with temperature. Based on the study, band diagram for p-CdTe/n-CdS hetero-junction has been proposed.
dc.identifier.citationMaterials Science in Semiconductor Processing, 2009, 12, 3, pp. 89-93
dc.identifier.issn13698001
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2009.07.014
dc.identifier.urihttps://idr.nitk.ac.in/handle/123456789/27632
dc.subjectBand diagrams
dc.subjectBand gap energy
dc.subjectCdS
dc.subjectCdTe
dc.subjectCdTe/CdS thin films
dc.subjectCurrent conduction mechanisms
dc.subjectGlass substrates
dc.subjectGrowth conditions
dc.subjectIV characteristics
dc.subjectNanocrystallines
dc.subjectStoichiometric compound
dc.subjectThermal evaporation technique
dc.subjectCadmium
dc.subjectCadmium alloys
dc.subjectCadmium sulfide
dc.subjectCadmium telluride
dc.subjectData storage equipment
dc.subjectThermal evaporation
dc.subjectCadmium compounds
dc.titleCharacterization of p-CdTe/n-CdS hetero-junctions

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