Faculty Publications
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Item The effect of substrate temperature on the structural, optical and electrical properties of vacuum deposited ZnTe thin films(2009) Rao, G.K.; Bangera, K.V.; Shivakumar, G.K.The present paper reports the effect of substrate temperature on the structural, optical and electrical properties of vacuum deposited zinc telluride (ZnTe) thin films. X-ray diffraction (XRD) analysis of the films, deposited on glass substrates, revealed that they have cubic structure with strong (111) texture. Room temperature deposits are tellurium rich and an increase in the substrate temperature up to 553 °K results in stoichiometric films. Electrical conductivity has been observed to increase with the increase in substrate temperature, accompanied by increase in the carrier concentration and the mobility of the carriers. The optical bandgap energy and the thermal activation energy of the films have also been evaluated. © 2009 Elsevier Ltd. All rights reserved.Item Preparation and characterization of CdxZn1-xS thin films by spray pyrolysis technique for photovoltaic applications(2009) Raviprakash, Y.; Bangera, K.V.; Shivakumar, G.K.CdxZn(1-x)S (x = 0, 0.2, 0.4, 0.6, 0.8, and 1) thin films were deposited by the chemical spray pyrolysis technique using a less used combination of chemicals. Depositions were done at 573 K on cleaned glass substrates. The composition, surface morphology and structural properties of deposited films were studied using EDAX, SEM and X-ray diffraction technique. XRD studies reveal that all the films are crystalline with hexagonal (wurtzite) structure and inclusion of Cd into the structure of ZnS improved the crystallinity of the films. In the entire compositions, the (0 0 2) diffraction peak is prominent which gives lattice matching to the chalcogenide semiconductor such as CuInxGa1-xSe2 and CuIn (s1-xSex)2, which are used in photovoltaic devices. The value of lattice constant 'a' and 'c' have been observed to vary with composition from 0.382 to 0.415 nm and 0.625 to 0.675 nm, respectively. The band gap of the thin films varied from 3.32 to 2.41 eV as composition varied from x = 0.0 to 1.0. It was observed that presence of small amount of cadmium results in marked changes in the optical band gap of ZnS. © 2009 Elsevier Ltd. All rights reserved.Item Growth, structural and optical properties of CdxZn1-xS thin films deposited using spray pyrolysis technique(2010) Raviprakash, Y.; Bangera, K.V.; Shivakumar, G.K.CdxZn(1-x)S (x = 0, 0.2, 0.4, 0.6, 0.8, and 1) thin films were deposited by the chemical spray pyrolysis technique using a less used combination of chemicals. Depositions were done at 573 K on cleaned glass substrates. The composition, surface morphology and structural properties of deposited films were studied using EDAX, SEM and X-ray diffraction technique. XRD studies reveal that all the films are crystalline with hexagonal (wurtzite) structure and inclusion of Cd into the structure of ZnS improved the crystallinity of the films. The value of lattice constant 'a' and 'c' have been observed to vary with composition from 0.382 to 0.415 nm and 0.625 to 0.675 nm, respectively. The band gap of the thin films varied from 3.32 to 2.41 eV as composition varied from x = 0.0-1.0. It was observed that presence of small amount of cadmium results in marked changes in the optical band gap of ZnS. © 2009 Elsevier B.V. All rights reserved.Item Studies on the photoconductivity of vacuum deposited ZnTe thin films(2010) Rao, K.G.; Bangera, K.V.; Shivakumar, G.K.The present paper reports the analysis of photoconductivity of vacuum deposited zinc telluride (ZnTe) thin films as a function of substrate temperature and post-deposition annealing. Detailed analyses were first carried out to understand the effect of substrate temperature and annealing on the structure, composition, optical and electrical properties of the films. The films deposited at elevated substrate temperatures showed faster and improved photoresponse. Post-deposition annealing was found to further enhance the photoresponse of the films. Attempts have been made to explain the improvement in the photoresponse on the basis of structural and compositional changes, taking place in the films, due to the substrate temperature and annealing. © 2010 Elsevier Ltd. All rights reserved.Item Properties of ZnO:Bi thin films prepared by spray pyrolysis technique(Elsevier Ltd, 2013) Sadananda Kumar, N.; Bangera, K.V.; Anandan, C.; Shivakumar, G.K.Undoped and Bi doped zinc oxide thin films were deposited on glass substrate at 450 °C using spray pyrolysis technique. The X-ray diffraction studies shows that Bi doped ZnO films are polycrystalline hexagonal structure with a preferred orientation along (101) direction. Crystallites size of the films decreases with increasing doping concentration. Scanning electron microscope image shows change in the surface morphology. The composition of Zn, O and Bi elements in the undoped and Bi doped ZnO films were investigated by X-ray photoelectron spectroscopy. Bi doped ZnO thin films show a transparency nearly 75% in the visible region. The optical band gap of ZnO thin films reduces from 3.25 eV to 3.12 eV with an increase in Bi concentration from 0 to 5at.% respectively. Electrical conductivity of ZnO thin films increased from 0.156 to 6.02S/cm with increasing Bi dopant concentration from 0% to 5% respectively. © 2013 Elsevier B.V. All rights reserved.Item Magnetically induced electrodeposition of Zn-Ni alloy coatings and their corrosion behaviors(Elsevier B.V., 2013) Rao, V.R.; Bangera, K.V.; Hegde, A.C.The less magnetic features of Zn-Ni alloy compared to Fe-Ni and Fe-Co alloys made it interesting to develop them under the influence of applied magnetic field. In this regard, the effects of a magnetic field (B) applied in a direction parallel and perpendicular to the nominal current, during electrodeposition process of Zn-Ni alloy have been investigated by means of X-ray diffraction and EDX analysis. The modification of crystal orientation by superimposition of a varying magnetic field is studied for alloys of constant nickel content (8 a %.), deposited at optimal current density (j) of 3.0 A dm-2. The effect of magnetic field on crystallographic orientation and hence the corrosion behaviors of the coatings were studied. The preferential orientations (101) and (002) of the zinc phase and (330) ?-Ni 5Zn21 phase are always favored to exist with parallel and perpendicular magnetic field. The preferential (321) ?-Ni 5Zn21 orientation is found to be the characteristic of perpendicular magnetic field. Further, Zn (100) orientation is found to be non-responsive to the effect of parallel magnetic field. The coatings developed using perpendicular magnetic field is more corrosion resistant compare to that for parallel magnetic field. This is attributed to the additional (321) ?-Ni5Zn21 orientations. The changes in the phase structure of the coatings deposited at different magnetic field are attributed to the effect caused by the magnetic convection induced in the electrolytic solution, called MHD effect (magneto-hydrodynamic effect). The chemical composition of the alloy was found to be same in both natural and magnetically induced deposition due to constant Ni content in the bath. The variation in the surface morphology of the coatings was studied by scanning electron microscopy (SEM). The Zn-Ni alloy coating deposited at 0.8 T perpendicular B showed the highest corrosion resistance (with corrosion rate=0.26 × 10-2 mm y-1) compared to the one with no B (corrosion rate = 14.46 × 10-2 mm y-1). The improved corrosion resistance of the coatings was discussed in the light of magnetic field effect on crystallographic orientation. © 2013 Elsevier B.V. All rights reserved.Item Properties of CdxZn1-xO thin films and their enhanced gas sensing performance(Elsevier Ltd, 2017) Bharath, S.P.; Bangera, K.V.; Shivakumar, G.K.CdxZn1-xO(0 ? x ? 0.20) thin films with different Cd concentrations were successfully deposited on glass substrate using spray pyrolysis technique. X-ray diffraction (XRD), scanning electron microscope (SEM) and energy dispersive X-ray analysis (EDAX) were used for structural, surface morphological and compositional characterization. The XRD analysis revealed that the synthesized films were hexagonal in structure with (002) orientation. The SEM studies confirm the formation of homogeneous and uniform films. Optical transmittance and electrical conductivity of the films were evaluated using UV–Visible spectroscopy and two probe method respectively. The optical studies showed that the CdxZn1-xO thin films have optical transmittance in entire visible region. The resistivity of undoped films were very high and it decreases with addition of cadmium. The gas sensing properties were investigated at optimal temperature of 350 °C for various volatile organic compounds like acetone, ethanol and methanol. The CdxZn1-xO thin films with 10 at. % cadmium concentration showed the sensitivity of 50% for 1 ppm ethanol. © 2017 Elsevier B.V.Item Study on structural, optical and electrical properties of spray pyrolysed PbxZn1-xS thin films for opto-Electronic applications(Elsevier GmbH journals@elsevier.com, 2017) Veena, E.; Bangera, K.V.; Shivakumar, G.K.Ternary thin films are attractive for many applications due to their band gap tunability. In the present study, the stoichiometric n-PbxZn1-xS (x = 0, 0.2, 0.4, 0.5, 0.6, 0.8 and 1) thin films were deposited on glass substrates using spray pyrolysis technique. The structural, optical and electrical studies have been carried out in order to understand the band gap tunability of prepared films. The XRD analysis confirmed that the prepared films were polycrystalline in nature with cubic structure. The substitution of zinc into the lead sulphide lattice led to decrease in the crystallite size, and the orientation of the films changed from (200) to (111) plane. SEM images clearly showed a modification in the morphology of the films from nano size particle to network structure due to Zn ion substitution. The optical band gap energy of PbxZn1-xS thin films varied from 0.40 eV to 3.54 eV and the transition has been changed from indirect to direct with the substitution of zinc into the lead lattice site. The resistivity and activation energy of the films were increased with increase in the band gap. The results confirm the formation of a continues solid solution of PbS and ZnS in the ternary phase which can be a suitable candidate for optoelectronic applications. © 2017 Elsevier GmbH