Properties of ZnO:Bi thin films prepared by spray pyrolysis technique

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Date

2013

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Elsevier Ltd

Abstract

Undoped and Bi doped zinc oxide thin films were deposited on glass substrate at 450 °C using spray pyrolysis technique. The X-ray diffraction studies shows that Bi doped ZnO films are polycrystalline hexagonal structure with a preferred orientation along (101) direction. Crystallites size of the films decreases with increasing doping concentration. Scanning electron microscope image shows change in the surface morphology. The composition of Zn, O and Bi elements in the undoped and Bi doped ZnO films were investigated by X-ray photoelectron spectroscopy. Bi doped ZnO thin films show a transparency nearly 75% in the visible region. The optical band gap of ZnO thin films reduces from 3.25 eV to 3.12 eV with an increase in Bi concentration from 0 to 5at.% respectively. Electrical conductivity of ZnO thin films increased from 0.156 to 6.02S/cm with increasing Bi dopant concentration from 0% to 5% respectively. © 2013 Elsevier B.V. All rights reserved.

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Keywords

Crystal structure, Doping (additives), Energy gap, Metallic films, Optical films, Optical properties, Oxide films, Photoelectron spectroscopy, Photoelectrons, Photons, Pyrolysis, Scanning electron microscopy, Semiconductor doping, Semiconductor materials, Spray pyrolysis, Substrates, Synthesis (chemical), X ray diffraction, X ray photoelectron spectroscopy, Zinc, Zinc oxide, Thin films, Doping concentration, Electrical conductivity, Glass substrates, Hexagonal structures, Preferred orientations, Scanning electrons, Spray-pyrolysis techniques, X-ray diffraction studies

Citation

Journal of Alloys and Compounds, 2013, 578, , pp. 613-619

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