Properties of ZnO:Bi thin films prepared by spray pyrolysis technique
| dc.contributor.author | Sadananda Kumar, N. | |
| dc.contributor.author | Bangera, K.V. | |
| dc.contributor.author | Anandan, C. | |
| dc.contributor.author | Shivakumar, G.K. | |
| dc.date.accessioned | 2026-02-05T09:34:57Z | |
| dc.date.issued | 2013 | |
| dc.description.abstract | Undoped and Bi doped zinc oxide thin films were deposited on glass substrate at 450 °C using spray pyrolysis technique. The X-ray diffraction studies shows that Bi doped ZnO films are polycrystalline hexagonal structure with a preferred orientation along (101) direction. Crystallites size of the films decreases with increasing doping concentration. Scanning electron microscope image shows change in the surface morphology. The composition of Zn, O and Bi elements in the undoped and Bi doped ZnO films were investigated by X-ray photoelectron spectroscopy. Bi doped ZnO thin films show a transparency nearly 75% in the visible region. The optical band gap of ZnO thin films reduces from 3.25 eV to 3.12 eV with an increase in Bi concentration from 0 to 5at.% respectively. Electrical conductivity of ZnO thin films increased from 0.156 to 6.02S/cm with increasing Bi dopant concentration from 0% to 5% respectively. © 2013 Elsevier B.V. All rights reserved. | |
| dc.identifier.citation | Journal of Alloys and Compounds, 2013, 578, , pp. 613-619 | |
| dc.identifier.issn | 9258388 | |
| dc.identifier.uri | https://doi.org/10.1016/j.jallcom.2013.07.036 | |
| dc.identifier.uri | https://idr.nitk.ac.in/handle/123456789/26862 | |
| dc.publisher | Elsevier Ltd | |
| dc.subject | Crystal structure | |
| dc.subject | Doping (additives) | |
| dc.subject | Energy gap | |
| dc.subject | Metallic films | |
| dc.subject | Optical films | |
| dc.subject | Optical properties | |
| dc.subject | Oxide films | |
| dc.subject | Photoelectron spectroscopy | |
| dc.subject | Photoelectrons | |
| dc.subject | Photons | |
| dc.subject | Pyrolysis | |
| dc.subject | Scanning electron microscopy | |
| dc.subject | Semiconductor doping | |
| dc.subject | Semiconductor materials | |
| dc.subject | Spray pyrolysis | |
| dc.subject | Substrates | |
| dc.subject | Synthesis (chemical) | |
| dc.subject | X ray diffraction | |
| dc.subject | X ray photoelectron spectroscopy | |
| dc.subject | Zinc | |
| dc.subject | Zinc oxide | |
| dc.subject | Thin films | |
| dc.subject | Doping concentration | |
| dc.subject | Electrical conductivity | |
| dc.subject | Glass substrates | |
| dc.subject | Hexagonal structures | |
| dc.subject | Preferred orientations | |
| dc.subject | Scanning electrons | |
| dc.subject | Spray-pyrolysis techniques | |
| dc.subject | X-ray diffraction studies | |
| dc.title | Properties of ZnO:Bi thin films prepared by spray pyrolysis technique |
