Faculty Publications
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Item Characterization of p-CdTe/n-CdS hetero-junctions(2009) Mahesha, M.G.; Bangera, K.V.; Shivakumar, G.K.Nano-crystalline CdTe/CdS thin film hetero-junctions have been grown on glass substrate by thermal evaporation technique. The growth conditions to get stoichiometric compound films have been optimized. The grown hetero-junctions have been characterized for their I-V characteristics. Analysis of I-V characteristics has been made to investigate the current conduction mechanism in p-CdTe/n-CdS hetero-junction. The band gap energy of cadmium telluride and cadmium sulfide films have been computed from the study of variation of resistance with temperature. Based on the study, band diagram for p-CdTe/n-CdS hetero-junction has been proposed.Item Studies on vacuum deposited p-ZnTe/n-CdTe heterojunction diodes(2011) Rao, K.G.; Bangera, K.V.; Shivakumar, G.K.The present paper reports the fabrication and detailed electrical characterization of p-ZnTe/n-CdTe heterojunction diodes prepared by vacuum deposition method. The possible conduction mechanisms of the heterojunction diode were determined by analyzing the I-V characteristics. The C-V characteristics of the heterojunction diodes were studied to determine the barrier height, carrier concentration and thickness of the depletion region in the heterojunction. A theoretical band diagram of the heterojunction was drawn based on Anderson's model. © 2010 Elsevier Ltd. All rights reserved.Item ZnxCd1-xS thin films: A study towards its application as a reliable photodetector(Academic Press, 2020) Barman, B.; Bangera, K.V.; Shivakumar, G.K.A reliable and stable photodetector shows enormous potential applications in health monitoring, intelligent wearable devices, and biological sensing. The noble opto-electrical properties of cadmium sulfide (CdS) makes it a favorable semiconductor for opto-electrical devices. The properties of CdS thin film can further be enhanced by alloying it with zinc sulfide (ZnS) to form ZnxCd1-xS compound semiconductor. Herein, a high performance, ZnxCd1-xS (x = 0, 0.15, 0.30, and 0.45) photodetector with good stability is designed and fabricated via a simple vacuum thermal evaporation technique. The various photodetector parameters of the ZnxCd1-xS films were investigated as a function of its composition. Among the various compositions of the ZnxCd1-xS thin films, the Zn0.15Cd0.85S films displayed excellent photosensitivity as high as 2.22 which is ~1.6 times higher than that of undoped CdS thin films. The research data suggests that a high-performance single layer ZnxCd1-xS photodetector with good stability and reproducibility can be fabricated using a thermal evaporation technique. © 2019 Elsevier Ltd