Conference Papers

Permanent URI for this collectionhttps://idr.nitk.ac.in/handle/123456789/28506

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Subject: search.filters.subject.Dual Active Bridge (DAB)

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    Design and Analysis of Wide Bandgap device based DAB Converter for EV On-Board Chargers
    (Institute of Electrical and Electronics Engineers Inc., 2024) Kumar, A.; Kalpana, R.; Bobba, P.B.
    This paper focused on design and simulation of 3.3 kW, 400V DC output, Gallium nitride high electron mobility transistors (GaN-HEMT) based Dual Active Bridge (DAB) DC-DC Converter for EV On-board Chargers (OBC). An optimized design of converter with high power density and high efficiency is proposed. GaN-HEMT and Planar Transformer are selected to achieve high power density due to its compact size and high switching frequency. Proposed GaN based converter design, overall component selection, modes of operation and control strategies are discussed in details. The simulation of proposed converter is carried out in Plexim software. The performance analysis of GaN based DAB and SiC based DAB are presented in Plexim software. The overall device losses of both converters are compared and presented. © 2024 IEEE.
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    Performance Comparison of Dual Active Bridge Conventional and Dual Active Bridge CLLC Resonant Converter
    (Institute of Electrical and Electronics Engineers Inc., 2024) Afridi, S.; Ur Rehman, M.B.; Nagendrappa, H.
    This paper presents a comparative analysis of the performance between dual active bridge (DAB) conventional converter and dual active bridge CLLC resonant converter for energy storage applications. The DAB resonant converter topology has gained significant attention due to its high efficiency, reduced size, and improved reliability compared to conventional converter topologies. In this paper, the performances of DAB conventional converter and DAB CLLC resonant converter on same control and modulation technique under various operating load have been evaluated. The study focuses on design of converters for an output power of 500 W, an input DC link voltage of 200 V, and an output voltage range of 60-84 V. © 2024 IEEE.
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    Design and Analysis of GaN and Planar Magnetics based DAB Converter for EV On-Board Chargers
    (Institute of Electrical and Electronics Engineers Inc., 2025) Kumar, A.; Kalpana, R.
    In this paper, A A 3.3kW, 600V DC input, 400V DC output, 250kHz Gallium nitride (GaN) based Dual Active Bridge (DAB) DC-DC Converter for EV on-board charger (OBC) is proposed. Typically, OBC consists of two stages, AC-DC and isolated DC-DC converter. An optimized design of isolated DC-DC converter with high switching frequency is proposed. In order to achieve high power density and high efficiency, DAB converter with GaN high electron mobility transistors (GaN-HEMT) as switch and Planar transformer are selected for converter design. Design of Planar transformer-based DAB Converter design are discussed in detail. Core selections and PCB based winding design of Planar Transformer are also discussed. The OBC is designed and evaluated in PLECS software. The performance of proposed GaN based DC-DC converter and SiC-DAB are analyzed and their losses are compared and presented in PLECS Software. © 2025 IEEE.