Design and Analysis of Wide Bandgap device based DAB Converter for EV On-Board Chargers
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Date
2024
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Publisher
Institute of Electrical and Electronics Engineers Inc.
Abstract
This paper focused on design and simulation of 3.3 kW, 400V DC output, Gallium nitride high electron mobility transistors (GaN-HEMT) based Dual Active Bridge (DAB) DC-DC Converter for EV On-board Chargers (OBC). An optimized design of converter with high power density and high efficiency is proposed. GaN-HEMT and Planar Transformer are selected to achieve high power density due to its compact size and high switching frequency. Proposed GaN based converter design, overall component selection, modes of operation and control strategies are discussed in details. The simulation of proposed converter is carried out in Plexim software. The performance analysis of GaN based DAB and SiC based DAB are presented in Plexim software. The overall device losses of both converters are compared and presented. © 2024 IEEE.
Description
Keywords
DC-DC Converter, Dual Active Bridge (DAB), EV On-Board Charger, Planar Magnetics, Wide Band Gap Devices (WBG)
Citation
Proceedings of the International Conference on Power Electronics, Drives, and Energy Systems for Industrial Growth, PEDES, 2024, Vol., 2024, p. -