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    Conduction mechanisms in vacuum deposited p-ZnTe/n-Si heterojunction diodes
    (2011) Rao, G.K.; Bangera, K.V.; Shivakumar, G.K.
    p-ZnTe/n-Si heterojunction diodes were prepared by vacuum depositing ZnTe films on n-Si substrates. Detailed electrical characterization was performed to determine the conduction mechanisms operating in the diode. Important parameters such as ideality factor and barrier height were also determined. © 2011 American Institute of Physics.