Conduction mechanisms in vacuum deposited p-ZnTe/n-Si heterojunction diodes
No Thumbnail Available
Date
2011
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract
p-ZnTe/n-Si heterojunction diodes were prepared by vacuum depositing ZnTe films on n-Si substrates. Detailed electrical characterization was performed to determine the conduction mechanisms operating in the diode. Important parameters such as ideality factor and barrier height were also determined. © 2011 American Institute of Physics.
Description
Keywords
Heterojunction, -VI Semiconductor, Thin Film, Vacuum Deposition, Zinc Telluride
Citation
AIP Conference Proceedings, 2011, Vol.1349, PART A, p. 601-602