Conference Papers
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Item Analysis of implant parameters in high voltage TRIPLE RESURF LDMOS for advanced SoC applications(Institute of Electrical and Electronics Engineers Inc., 2017) Somayaji, B.J.; Bhat, M.S.This paper presents the design of RESURF based non-conventional LDMOS and its parametric analysis. The work investigates the impact of three primary parameters relating to p-implant, namely implant placement distance, implant doping and implant thickness, on device performance and premature avalanche breakdown. To avoid undesirable implant-drain punch-through, a boundary of limits is proposed near drain. Further, the implant parameters are optimized to maximize the ratio of Breakdown Voltage Vs On-resistance Ron to enhance the suitability of the device for High Voltage I/O applications in Sub-micron RF-SoC. A breakdown voltage of 21V at a very low Ron of 2.5kΩ was achieved for a device gate length of 250nm and gate oxide thickness of 5nm. © 2016 IEEE.Item Triple reduced surface field drain extended MOS device design and its RF performance evaluation for sub-micron RF SoC platform(American Scientific Publishers, 2017) Somayaji, B.J.; Bhat, M.S.This paper presents the design of RESURF based non-conventionalDrain ExtendedMOS (DEMOS) and its parametric analysis. The work investigates the impact of three primary parameters relating to p-implant, namely implant placement distance, implant doping and implant thickness, on device performance and premature avalanche breakdown. To avoid undesirable implant-drain punch-through, a boundary of limits is proposed near drain. Further, the implant parameters are optimized to maximize the ratio of Breakdown Voltage (BVt) to ON-resistance (RON). A breakdown voltage of 21 V at a low RON of 2.5 kΩ was achieved for a device gate length of 250 nm and gate oxide thickness of 5 nm. Using the optimized device design, the RF/Analog performance parameters are extracted and evaluated to enhance the suitability of the device for high voltage I/O applications in Sub-micron RF-SoC. © © 2017 American Scientific Publishers All rights reserved Printed in the United States of America.