Conference Papers

Permanent URI for this collectionhttps://idr.nitk.ac.in/handle/123456789/28506

Browse

Filters

20111

Settings

Author: search.filters.author.Bangera, K.V.Subject: search.filters.subject.-VI Semiconductor

Search Results

Now showing 1 - 1 of 1
  • No Thumbnail Available
    Item
    Conduction mechanisms in vacuum deposited p-ZnTe/n-Si heterojunction diodes
    (2011) Rao, G.K.; Bangera, K.V.; Shivakumar, G.K.
    p-ZnTe/n-Si heterojunction diodes were prepared by vacuum depositing ZnTe films on n-Si substrates. Detailed electrical characterization was performed to determine the conduction mechanisms operating in the diode. Important parameters such as ideality factor and barrier height were also determined. © 2011 American Institute of Physics.