Browsing by Author "Shreekanthan, K.N."

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Growth and characterization of semiconducting cadmium selenide thin films
(2003) Shreekanthan, K.N.; Rajendra, B.V.; Kasturi, V.B.; Shivakumar, G.K.
Semiconducting thin films of cadmium selenide have been grown by conventional thermal evaporation technique. The effect of various growth parameters like rate of deposition and deposition temperature has been studied in detail. Films deposited at room temperature are cadmium rich with segregated selenium globules. A deposition temperature of 453K has been found to yield stoichiometric, homogeneous films. The films have been analysed for optical band gap and thermal activation energies. Films of low electrical resistivity have been obtained for possible applications.
Growth and characterization of vacuum deposited cadmium telluride thin films
(2003) Shreekanthan, K.N.; Kasturi, V.B.; Shivakumar, G.K.
Semiconducting thin films of cadmium telluride, both p-type and n-type, have been prepared by conventional thermal evaporation technique. The influence of various growth parameters such as the rate of deposition, deposition temperature, post-deposition heat treatment, and source material composition has been investigated. The films deposited at high deposition rates and low substrate temperatures exhibited an excess of tellurium and showed a p-type conductivity, whereas those deposited at high substrate temperature and low deposition rates contained excess cadmium and are n-type in nature. An intrinsic bandgap of 1.49 eV for stoichiometric films obtained by both electrical and optical characterization is reported.
Semiconducting thin films of cadmium selenide have been grown by conventional thermal evaporation technique. The effect of various growth parameters like rate of deposition and deposition temperature has been studied in detail. Films deposited at room temperature are cadmium rich with segregated selenium globules. A deposition temperature of 453K has been found to yield stoichiometric, homogeneous films. The films have been analysed for optical band gap and thermal activation energies. Films of low electrical resistivity have been obtained for possible applications.
(Growth and characterization of semiconducting cadmium selenide thin films) Shreekanthan, K.N.; Rajendra, B.V.; Kasturi, V.B.; Shivakumar, G.K.
2003
Semiconducting thin films of cadmium telluride, both p-type and n-type, have been prepared by conventional thermal evaporation technique. The influence of various growth parameters such as the rate of deposition, deposition temperature, post-deposition heat treatment, and source material composition has been investigated. The films deposited at high deposition rates and low substrate temperatures exhibited an excess of tellurium and showed a p-type conductivity, whereas those deposited at high substrate temperature and low deposition rates contained excess cadmium and are n-type in nature. An intrinsic bandgap of 1.49 eV for stoichiometric films obtained by both electrical and optical characterization is reported.
(Growth and characterization of vacuum deposited cadmium telluride thin films) Shreekanthan, K.N.; Kasturi, V.B.; Shivakumar, G.K.
2003
Structure and properties of vacuum deposited cadmium telluride thin films
(2006) Shreekanthan, K.N.; Bangera, K.V.; Shivakumar, G.K.; Mahesha, M.G.
Systematic and detailed study of the growth and properties of vacuum deposited cadmium telluride thin films was made. Both p- and n-type films were grown and these films were characterized for their structural, optical, and electrical properties. The crystallographic structure of the deposits was found to be dependent on the rate of deposition. Low deposition rates were observed to result in hexagonal deposits whereas high rates of deposition favoured cubic structure for the film. Electrical and optical properties were also found to be dependent on the deposition parameters.
Structure and properties of vacuum deposited cadmium telluride thin films
(2006) Shreekanthan, K.N.; Bangera, K.V.; Shivakumar, G.K.; Mahesha, M.G.
Systematic and detailed study of the growth and properties of vacuum deposited cadmium telluride thin films was made. Both p- and n-type films were grown and these films were characterized for their structural, optical, and electrical properties. The crystallographic structure of the deposits was found to be dependent on the rate of deposition. Low deposition rates were observed to result in hexagonal deposits whereas high rates of deposition favoured cubic structure for the film. Electrical and optical properties were also found to be dependent on the deposition parameters.