Please use this identifier to cite or link to this item: https://idr.nitk.ac.in/jspui/handle/123456789/7940
Title: Electrical characterization of MEH-PPV based Schottky diodes
Authors: Nimith, K.M.
Satyanarayan, M.N.
Umesh, G.
Issue Date: 2016
Citation: AIP Conference Proceedings, 2016, Vol.1728, , pp.-
Abstract: MEH-PPV Schottky diodes with and without Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) have been fabricated and characterized. The highlight of this work is that all the fabrication and characterization steps had been carried out in the ambient conditions and the device fabrication was done without any UV-Ozone surface treatment of ITO anodes. Current Density-Voltage characteristics shows that the addition of hole injection layer (HIL) enhances the charge injection into the polymer layer by reducing the energy barrier across the Indium Tin Oxide (ITO)-Organic interface. The rectification ratio increases to 2.21 from 0.76 at 5V for multilayer devices compared to single layer devices. Further we investigated the effect of an alkali metal fluoride (LiF) by inserting a thin layer in between the organic layer and Aluminum (Al) cathode. The results of these investigations will be discussed in detail. � 2016 Author(s).
URI: http://idr.nitk.ac.in/jspui/handle/123456789/7940
Appears in Collections:2. Conference Papers

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