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|Title:||Uniaxial stress induced band structure changes in h-SiB|
|Citation:||AIP Conference Proceedings, 2018, Vol.1953, , pp.-|
|Abstract:||Uniaxial stress was applied along zigzag and armchair directions in compressive and tensile regime to see if there is any metal-semiconductor transition in SiB. Metallicity increased with increasing stress both in compression and tension in zigzag and armchair directions instead of a metal-semiconductor transition. SiB maintained energetical stability in the whole range of applied stress. � 2018 Author(s).|
|Appears in Collections:||2. Conference Papers|
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