Please use this identifier to cite or link to this item:
Title: Uniaxial stress induced band structure changes in h-SiB
Authors: Manju, M.S.
Ajith, K.M.
Valsakumar, M.C.
Issue Date: 2018
Citation: AIP Conference Proceedings, 2018, Vol.1953, , pp.-
Abstract: Uniaxial stress was applied along zigzag and armchair directions in compressive and tensile regime to see if there is any metal-semiconductor transition in SiB. Metallicity increased with increasing stress both in compression and tension in zigzag and armchair directions instead of a metal-semiconductor transition. SiB maintained energetical stability in the whole range of applied stress. � 2018 Author(s).
Appears in Collections:2. Conference Papers

Files in This Item:
There are no files associated with this item.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.