Please use this identifier to cite or link to this item:
https://idr.nitk.ac.in/jspui/handle/123456789/18423| Title: | Normally Off Ga2o3 On Insulator Junction Less Drain Extended Field Effect Transistor |
| Authors: | Nikhil, K. S Manukrishna, V. R National Institute of Technology Karnataka, Surathkal |
| Keywords: | Ga2o3;Drain Extended Field;Transistor |
| Issue Date: | 28-Jul-2023 |
| Publisher: | Indian Patent Office, Chennai |
| Series/Report no.: | 202341033746; |
| Description: | Patent Filed Date: 13.05.2023 Published Date: 28.07.2023 |
| URI: | http://idr.nitk.ac.in/jspui/handle/123456789/18423 |
| Appears in Collections: | 7. Patents Published |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 2023_202141037148 (19).pdf | 125.33 kB | Adobe PDF |  View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.