Please use this identifier to cite or link to this item:
Title: Studies on vacuum deposited p-ZnTe/n-ZnSe heterojunction diodes
Authors: Rao, G.K.
Bangera, K.V.
Shivakumar, G.K.
Issue Date: 2010
Citation: Solid-State Electronics, 2010, Vol.54, 8, pp.787-790
Abstract: p-ZnTe/n-ZnSe heterojunction diodes were prepared by vacuum deposition and a detailed electrical characterization of the heterojunction was performed. The I-V and C-V characteristics of the heterojunction diodes were studied to determine the conduction mechanism, barrier height, space charge density and thickness of the depletion region in the heterojunction. The bandgap and activation energies of n-ZnSe and p-ZnTe were also determined and a theoretical band diagram of p-ZnTe/n-ZnSe heterojunction was drawn based on Anderson's model. 2010 Elsevier Ltd. All rights reserved.
Appears in Collections:1. Journal Articles

Files in This Item:
File Description SizeFormat 
13119.pdf401.36 kBAdobe PDFThumbnail

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.