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https://idr.nitk.ac.in/jspui/handle/123456789/13118| Title: | Studies on vacuum deposited p-ZnTe/n-CdTe heterojunction diodes |
| Authors: | Rao, G.K. Bangera, K.V. Shivakumar, G.K. |
| Issue Date: | 2011 |
| Citation: | Solid-State Electronics, 2011, Vol.56, 1, pp.100-103 |
| Abstract: | The present paper reports the fabrication and detailed electrical characterization of p-ZnTe/n-CdTe heterojunction diodes prepared by vacuum deposition method. The possible conduction mechanisms of the heterojunction diode were determined by analyzing the I-V characteristics. The C-V characteristics of the heterojunction diodes were studied to determine the barrier height, carrier concentration and thickness of the depletion region in the heterojunction. A theoretical band diagram of the heterojunction was drawn based on Anderson's model. 2010 Elsevier Ltd. All rights reserved. |
| URI: | http://idr.nitk.ac.in/jspui/handle/123456789/13118 |
| Appears in Collections: | 1. Journal Articles |
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