Please use this identifier to cite or link to this item:
Title: Studies on vacuum deposited p-ZnTe/n-CdTe heterojunction diodes
Authors: Rao, G.K.
Bangera, K.V.
Shivakumar, G.K.
Issue Date: 2011
Citation: Solid-State Electronics, 2011, Vol.56, 1, pp.100-103
Abstract: The present paper reports the fabrication and detailed electrical characterization of p-ZnTe/n-CdTe heterojunction diodes prepared by vacuum deposition method. The possible conduction mechanisms of the heterojunction diode were determined by analyzing the I-V characteristics. The C-V characteristics of the heterojunction diodes were studied to determine the barrier height, carrier concentration and thickness of the depletion region in the heterojunction. A theoretical band diagram of the heterojunction was drawn based on Anderson's model. 2010 Elsevier Ltd. All rights reserved.
Appears in Collections:1. Journal Articles

Files in This Item:
File Description SizeFormat 
13118.pdf521.24 kBAdobe PDFThumbnail

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.