![](/jspui/image/dspace_header.jpg)
Please use this identifier to cite or link to this item:
https://idr.nitk.ac.in/jspui/handle/123456789/11764
Title: | Investigation of hole-injection in ?-NPD using capacitance and impedance spectroscopy techniques with F4TCNQ as hole-injection layer: Initial studies |
Authors: | Fernandes, J.M. Raveendra, Kiran, M. Ulla, H. Satyanarayan, M.N. Umesh, G. |
Issue Date: | 2014 |
Citation: | Superlattices and Microstructures, 2014, Vol.76, , pp.385-393 |
Abstract: | The charge accumulation leading to injection at the organic interface in the sequentially doped hole-only device structure is studied using capacitance and impedance based spectroscopic techniques. In this paper, we investigate the role of p-type dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) in the charge transport properties of N,N'-Di(1-naphthyl)-N,N'-diphenyl-(1,1?-biphenyl)-4,4?-diamine (?-NPD) through sequential deposition. We show that the hole injection into ?-NPD increases with the increase of interlayer (F4TCNQ) thickness by correlating the current density-voltage, capacitance-voltage, capacitance-frequency and impedance measurements. 2014 Elsevier Ltd. All rights reserved. |
URI: | http://idr.nitk.ac.in/jspui/handle/123456789/11764 |
Appears in Collections: | 1. Journal Articles |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.