Please use this identifier to cite or link to this item:
Title: Investigation of hole-injection in ?-NPD using capacitance and impedance spectroscopy techniques with F4TCNQ as hole-injection layer: Initial studies
Authors: Fernandes, J.M.
Raveendra, Kiran, M.
Ulla, H.
Satyanarayan, M.N.
Umesh, G.
Issue Date: 2014
Citation: Superlattices and Microstructures, 2014, Vol.76, , pp.385-393
Abstract: The charge accumulation leading to injection at the organic interface in the sequentially doped hole-only device structure is studied using capacitance and impedance based spectroscopic techniques. In this paper, we investigate the role of p-type dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) in the charge transport properties of N,N'-Di(1-naphthyl)-N,N'-diphenyl-(1,1?-biphenyl)-4,4?-diamine (?-NPD) through sequential deposition. We show that the hole injection into ?-NPD increases with the increase of interlayer (F4TCNQ) thickness by correlating the current density-voltage, capacitance-voltage, capacitance-frequency and impedance measurements. 2014 Elsevier Ltd. All rights reserved.
Appears in Collections:1. Journal Articles

Files in This Item:
There are no files associated with this item.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.