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https://idr.nitk.ac.in/jspui/handle/123456789/10191
Title: | Characterization of p-CdTe/n-CdS hetero-junctions |
Authors: | Mahesha, M.G. Bangera, K.V. Shivakumar, G.K. |
Issue Date: | 2009 |
Citation: | Materials Science in Semiconductor Processing, 2009, Vol.12, 3, pp.89-93 |
Abstract: | Nano-crystalline CdTe/CdS thin film hetero-junctions have been grown on glass substrate by thermal evaporation technique. The growth conditions to get stoichiometric compound films have been optimized. The grown hetero-junctions have been characterized for their I-V characteristics. Analysis of I-V characteristics has been made to investigate the current conduction mechanism in p-CdTe/n-CdS hetero-junction. The band gap energy of cadmium telluride and cadmium sulfide films have been computed from the study of variation of resistance with temperature. Based on the study, band diagram for p-CdTe/n-CdS hetero-junction has been proposed. |
URI: | http://idr.nitk.ac.in/jspui/handle/123456789/10191 |
Appears in Collections: | 1. Journal Articles |
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